A kind of anti-PID solar cell manufacturing method

Abstract

The invention discloses a PID-resistant solar cell manufacturing method. The method includes the steps that under the room temperature, ultraviolet light penetrates through compressed air or oxygen with the thickness ranging from 0.2 cm to 1 cm and irradiates the diffusion surface of a silicon wafer, and then an oxidation film with the thickness ranging from 0.5 nm to 1 nm is grown. The silicon oxide layer can meet the requirement for PID resistance under the condition that the silicon oxide layer is extremely thin, and therefore the problem that due to the fact that the silicon oxide layer is too thick, the reflection reduction effect is lowered is solved. The solar cell product perfectly solves the contradictory problem between PID resistance and the light utilization ratio. Meanwhile, the oxide layer manufactured through the method has a good surface passivation effect, and the photoelectric conversion efficiency of the solar cell piece can be improved. The PID-resistant solar cell manufacturing method is simple in process and high in film forming speed, the film thickness can be automatically controlled, the thickness of the formed film can be controlled without special means, the practicability of the whole process is greatly improved, and an effective path is provided for large-scale industrial production.

Description

technical field [0001] The invention belongs to the field of manufacturing crystalline silicon solar cells, and in particular relates to a method for manufacturing a solar cell with anti-PID effect. Background technique [0002] The PID (Potential Induced Degradation) effect is called the high-voltage induced attenuation effect, and it is a relatively new attenuation effect that has appeared in the photovoltaic field in recent years. With the gradual promotion and application of photovoltaic grid-connected systems, the system voltage is getting higher and higher, commonly used are 600V and 1000V. The pressure of the cells inside the module relative to the ground is getting higher and higher, and some even reach 600-1000V. Generally, the aluminum frame of the module is required to be grounded, so that a high voltage of 600-1000V is formed between the battery sheet and the aluminum frame. Generally speaking, during the lamination process of component encapsulation, the struc...

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Problems solved by technology

However, the problems brought about by thicker silicon oxide films are: first of all, it affects the efficiency of the process. Whether it is PECVD or thermal oxidation, it will take a long time to process a large thickness of silicon oxide film.

Secondly, since the refractive index of the silicon oxide film is smaller than that of silicon and silicon nitride, when the thickness of the silicon oxide film is too thick, the anti-reflection effect of the silicon nitride and silicon oxide composite film is greatly reduced, so that the light utilization rate of the solar cell is greatly reduced. Affects the efficiency of solar cells

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