A Method for Improving Nonlinear Optical Properties Using Nano-Silicon and SiO2 Interface States

Abstract

The invention provides a method for improving non-linear optical performance by using nanometer silicon and silicon dioxide interface state. The method comprises the following steps of 1) preparing multiple thin film layers alternated by amorphous silicon and silicon dioxide on a monocrystalline silicon substrate or a quartz substrate by using a plasma enhanced chemical vapor deposition technique, controlling the thicknesses of amorphous silicon sub-layers and silicon dioxide sub-layers through controlling the growth time and in-situ plasma oxidation time of the amorphous silicon, controlling the thicknesses of the amorphous silicon sub-layers and the silicon dioxide sub-layers, then forming nanometer silicon quantum dots to acquire materials which have different sizes and densities, wherein 4-16 layers of amorphous silicon and silicon dioxide are prepared ordinarily; 2) performing thermal annealing treatment on the multiple amorphous silicon and silicon dioxide thin film layers. By the method, the non-linear optical coefficient can be enhanced in a larger range, and the non-linear optical performance can be regulated.

Description

Technical field: [0001] The invention relates to the technical field of nonlinear optical devices. Background technique: [0002] Since the 1960s, due to the continuous development of silicon related technologies, especially the introduction of silicon planar technology and microfabrication technology, the production of silicon integrated circuits has been promoted, and because of the corresponding materials, design and manufacturing technologies The advancement of microelectronics technology has made rapid development and opened up a new era of silicon microelectronics technology development. Information technologies such as computer, automatic control and communication developed on this basis have also developed rapidly. However, with the further improvement of integration, the size of the device will be reduced proportionally, and many new effects will appear, such as quantum tunneling effect, short channel effect, RC interconnection delay and other effects, which will a...

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Problems solved by technology

[0004] Due to the small nonlinear optical coefficient of bulk silicon materials, its application in nonlinear optical devices such as optical switches, optical amplification and optical modulation is limited.

The existing methods of preparing nano-silicon / silicon dioxide films mostly use nano-silicon embedded in the silicon dioxide matrix. Although the nonlinear optical coefficient of the material can be improved, the nonlinear optical coefficient of the material is mainly improved by controlling the size and density of the nano-silicon. Linear optical coefficient, technically more difficult, and the range of adjustment is limited

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