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High-dielectric-constant Bi0.92Ho0.08Fe[1-x]MnxO3 ferroelectric film and preparation method thereof

A high dielectric constant, ferroelectric thin film technology, applied in chemical instruments and methods, iron compounds, inorganic chemistry, etc., can solve the problem of difficult to obtain saturated hysteresis loop and large remanent polarization, which hinders the application of materials, Narrow temperature range and other problems, to achieve the effect of improving multiferroic properties, reducing volatilization, and improving electrical properties

Active Publication Date: 2014-04-16
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the limitations of the preparation process and preparation equipment, and BiFeO 3 The temperature range that exists is very narrow, so it is inevitable that impurity phases will be generated when preparing samples, resulting in BiFeO 3 The material has a large leakage current, low resistivity, small dielectric constant, and low withstand voltage. It is difficult to obtain a saturated hysteresis loop and a large remanent polarization, which seriously hinders the application of the material in magnetic storage, etc. field application

Method used

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  • High-dielectric-constant Bi0.92Ho0.08Fe[1-x]MnxO3 ferroelectric film and preparation method thereof
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  • High-dielectric-constant Bi0.92Ho0.08Fe[1-x]MnxO3 ferroelectric film and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Step 1: Choose the FTO / glass substrate as the substrate, and place the cut FTO / glass substrate in detergent, acetone, and ethanol in order for ultrasonic cleaning. After each ultrasonic cleaning for 10 minutes, rinse the substrate with a large amount of distilled water, and finally use nitrogen. Blow dry. Then put the FTO / glass substrate into a 70°C oven and bake for 5 minutes, take it out and let it stand to room temperature. Finally, the FTO / glass substrate is placed in an ultraviolet irradiator to irradiate it for 40 minutes to make the surface of the substrate reach "atomic cleanliness".

[0039] Step 2: The massage ratio is 0.97:0.99:0.08:0.01 (ie x=0.01) and Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·9H 2 O, Ho(NO 3 ) 3 ·6H 2 O and C 4 H 6 MnO 4 ·4H 2 O is dissolved in the mixed solution, and after 2.5 hours of magnetic stirring, a uniform and stable precursor is obtained. The mixed solution is a mixture of ethylene glycol methyl ether and acetic anhydride in a volume ratio o...

Embodiment 2

[0044] Step 1: Choose the FTO / glass substrate as the substrate, and place the cut FTO / glass substrate in detergent, acetone, and ethanol in order for ultrasonic cleaning. After each ultrasonic cleaning for 10 minutes, rinse the substrate with a large amount of distilled water, and finally use nitrogen. Blow dry. Then put the FTO / glass substrate into a 70°C oven and bake for 5 minutes, take it out and let it stand to room temperature. Finally, the FTO / glass substrate is placed in an ultraviolet irradiator to irradiate it for 40 minutes to make the surface of the substrate reach "atomic cleanliness".

[0045] Step 2: The massage ratio is 0.97:0.98:0.08:0.02 (ie x=0.02) and Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·9H 2 O, Ho(NO 3 ) 3 ·6H 2 O and C 4 H 6 MnO 4 ·4H 2 O is dissolved in the mixed solution, and after 2.5 hours of magnetic stirring, a uniform and stable precursor is obtained. The mixed solution is a mixture of ethylene glycol methyl ether and acetic anhydride in a volume ratio o...

Embodiment 3

[0050] Step 1: Select the FTO / glass substrate as the substrate, and place the cut FTO / glass substrate in detergent, acetone and ethanol in order for ultrasonic cleaning. After each ultrasonic cleaning for 10 minutes, rinse the substrate with a large amount of distilled water, and finally use nitrogen. Blow dry. Then put the FTO / glass substrate into a 70°C oven and bake for 5 minutes, take it out and let it stand to room temperature. Finally, the FTO / glass substrate is placed in an ultraviolet irradiator for 40 minutes to make the surface of the substrate achieve "atomic cleanliness".

[0051] Step 2: The massage ratio is 0.97:0.97:0.08:0.03 (ie x=0.03) and Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·9H 2 O, Ho(NO 3 ) 3 ·6H 2 O and C 4 H 6 MnO 4 ·4H 2 O is dissolved in the mixed solution, and after 2.5 hours of magnetic stirring, a uniform and stable precursor is obtained. The mixed solution is a mixture of ethylene glycol methyl ether and acetic anhydride in a volume ratio of 3:1. The met...

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Abstract

The invention relates to a high-dielectric-constant Bi0.92Ho0.08Fe[1-x]MnxO3 ferroelectric film (x=0.01-0.05) and a preparation method thereof. The film is in a distorted perovskite structure belonging to a rhombohedral system, and has favorable uniformity; and the remanent polarization is 88-116 mu C / cm<2>, and the dielectric constant is 223.1-327.3. The preparation method comprises the following steps: dissolving bismuth nitrate, iron nitrate, holmium nitrate and manganese acetate in an ethylene glycol monomethyl ether-acetic anhydride mixed solution to obtain a precursor solution; evenly spin-coating the precursor solution on a substrate, baking to obtain a dry film, and annealing to obtain a Bi0.92Ho0.08Fe[1-x]MnxO3 film; and spin-coating the precursor solution again, baking and annealing to the required film thickness, thereby obtaining the film. The method has the advantages of simple facility request and controllable doping amount, and can greatly enhance the dielectric properties of the BiFeO3 film.

Description

Technical field [0001] The invention belongs to the field of functional materials, and specifically relates to a high dielectric constant Bi 0.92 Ho 0.08 Fe 1-x Mn x O 3 Ferroelectric thin film and its preparation method. Background technique [0002] As a typical single-phase multiferroic perovskite material, BiFeO 3 It is one of the few materials that have both ferroelectricity and ferromagnetism at room temperature (T c =1103K, T N =640K). BiFeO 3 It has magnetoelectric coupling properties at room temperature and has potential application prospects in information storage, spintronic devices and pyroelectric effects, so BiFeO 3 It has become a hot research topic in recent years. [0003] However, the pure phase BiFeO 3 The material has a large leakage current, and the root cause of leakage is BiFeO 3 Unstable and volatile Bi 3+ Ion, with Bi 3+ The volatilization of ions, the sintering process will form oxygen vacancies in the material, and cause Fe 3+ Price reduced to Fe 2+ , Pro...

Claims

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Application Information

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IPC IPC(8): C01G49/00
Inventor 谈国强耶维
Owner SHAANXI UNIV OF SCI & TECH
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