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Semiconductor device power module

A technology of power modules and semiconductors, which is applied in the direction of output power conversion devices, electrical components, cooling/ventilation/heating transformation, etc., and can solve the problem that the integrated gate commutation thyristor cannot be fully utilized and the requirements for stray inductance distribution are more stringent , Increase the volume of the circuit structure, etc., to achieve the effect of compact structure, strong heat dissipation, and easy maintenance

Active Publication Date: 2014-03-12
CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST
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Problems solved by technology

[0006] In a three-level circuit, the number of components is relatively large. If the related components are scattered and assembled and then connected by busbars, it will not only increase the volume of the circuit structure engineering, but also increase the stray inductance of the line.
The integrated gate commutated thyristor (IGCT) device has strict requirements on the distribution of stray inductance in the circuit connection, and the increase of stray inductance means that the ability of the integrated gate commutated thyristor (IGCT) device cannot be fully utilized
In addition, if the integrated gate commutated thyristor (IGCT) power components are installed separately, it is not conducive to future maintenance work

Method used

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  • Semiconductor device power module
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Embodiment Construction

[0026] The present invention will be described in detail below with reference to the accompanying drawings.

[0027] figure 1 A longitudinal section of a power module 50 according to the invention is shown. refer to figure 1 , the semiconductor power module 50 according to the present invention adopts the left pressure plate 3 and the steel plate 2 as the left support pressure plate, and adopts the right pressure plate 8 and the steel plate 2 as the right support pressure plate.

[0028] The power module 50 integrates an integrated gate commutated thyristor (IGCT) 9, a freewheeling diode 13, a clamping absorption diode 7, a midpoint clamping diode 6, a clamping absorption capacitor 5, and a water cooling radiator 14 through three pressing mechanisms 10. and related insulating components 11 are press-fitted into three series of power strings arranged in a triangle, and the supports on the left and right sides are fastened into a frame by four support columns 4 .

[0029] The...

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Abstract

The invention provides a semiconductor device power module and belongs to the technical field of semiconductors. The power module comprises supporting structures which are arranged on the two sides and are used for fixing the power module, and a power component which is arranged between the supporting structures and extends along the longitudinal direction. The power component comprises a plurality of semiconductor devices which are press-fit through a press fitting mechanism. Each semiconductor device comprises an IGCT (Integrated Gate Commutated Thyristor), a clamping absorber diode, a neutral-point-clamped diode and a freewheel diode. The semiconductor device power module provided by the invention has the advantages that the electrical performance is excellent, the potential of an IGCT device is fully realized, the structure is compact, the stray inductance is small, the heat dissipation capability is strong, the power module is easy to maintain and the like.

Description

technical field [0001] The invention relates to a semiconductor device power module, which is especially suitable for a three-level integrated gate commutated thyristor (IGCT) converter. Background technique [0002] With the rapid development of semiconductor device technology, high-power fully-controlled devices represented by insulated gate bipolar transistors (IGBTs), power metal oxide semiconductor field effect transistors (Power MOSFETs), and integrated gate commutated thyristors (IGCTs) have been obtained. Rapid development. [0003] The integrated gate commutated thyristor (IGCT) is a high-efficiency and high-reliability power semiconductor device, which is developed from the gate-turn-off (GTO) technology. ) thyristor, and it is a transistor when it is turned off. It has the advantages of fast switching speed, low switching loss, low thyristor conduction loss, high blocking voltage, and large output current, so it integrates insulated gate bipolar transistors (IGBT...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/00H05K7/02H05K7/20
Inventor 胡家喜孙保涛李彦涌杨进峰罗凌波姚磊刘海涛朱武刘少奇马振宇罗剑波周伟军
Owner CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST
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