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Positive and negative photoresist technology combined microstrip line manufacturing method

A manufacturing method and technology of microstrip lines, which are applied in the manufacture of microstructure devices, metal material coating processes, processes for producing decorative surface effects, etc. Effect

Inactive Publication Date: 2014-01-29
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the millimeter wave band, as the frequency increases, the requirements for processing accuracy are getting higher and higher. Traditional machining can no longer meet the requirements, and new processing technologies must be used, and MEMS micro-processing technology can meet the requirements of processing accuracy.

Method used

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  • Positive and negative photoresist technology combined microstrip line manufacturing method

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Comparison scheme
Effect test

Embodiment 1

[0022] A microstrip line manufacturing method combining positive and negative glue technology, comprising the following steps:

[0023] (1) Put a certain size of glass or silicon wafer (such as 4 inches) 2 SO 4 +H 2 o 2 , deionized water in order to wash, dry, and then evaporate HMDS (a coupling agent) on the substrate.

[0024] (2) Coat AZ4620 positive photoresist on the treated substrate with a thickness of 5 μm by spin coating.

[0025] (3) Pre-baking the photoresist on a hot plate, the conditions are 65°C / 30min, 95°C / 60min, 120°C / 60min, and cool with the furnace.

[0026] (4) Deposit Cr / Cu seed layer with magnetron multi-target sputtering machine,

[0027] (5) Coating AZ4620 positive resist, 10 μm, on the Cr / Cu seed layer.

[0028] (6) Pre-bake the photoresist on a hot plate, the conditions are 65°C / 30min, 95°C / 60min, and cool with the furnace.

[0029] (7) SUSS MA6 UV lithography machine for exposure and development.

[0030] (8) Ni metal plating.

[0031] (9) ...

Embodiment 2

[0046] (1) Wash a glass or silicon wafer of a certain size (such as 4 inches) with H2SO4+H2O2 and deionized water in sequence, dry it, and then evaporate HMDS (a coupling agent) on the substrate.

[0047] (2) Coat the ARP positive photoresist on the processed substrate by spin coating, with a thickness of 10 μm.

[0048] (3) Pre-bake the photoresist with a program-controlled oven, the conditions are 65°C / 40min, 95°C / 90min, 120°C / 90min, and cool with the furnace.

[0049] (4) Deposit Cu seed layer with magnetron multi-target sputtering machine, thickness

[0050] (5) Coating AZ4620 positive resist, 10 μm, on the Cu seed layer.

[0051] (6) Pre-baking the photoresist with a program-controlled oven, the conditions are 65°C / 400min, 95°C / 90min, and cool with the furnace.

[0052] (7) SUSS MA6 UV lithography machine for exposure and development.

[0053] (8) Ni metal plating.

[0054] (9) After the electroplating is completed, the film is hardened, and the condition is 120°C / 6...

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Abstract

The invention discloses a positive and negative photoresist technology combined microstrip line manufacturing method. The positive and negative photoresist technology combined microstrip line manufacturing method includes: 1), spinning a layer of positive photoresist on glass sheets or silicon slices as a device releasing sacrificial layer; 2), deposing a layer of Cu metal on the positive photoresist via the magnetron sputtering technology as an electroplating seed layer; 3), coating the positive photoresist on the Cu seed layer and photoetching; 4), using electroplate Ni as a microstrip line ground layer; 5), sputtering the Cu metal layer; 6), coating SU-8 photoresist on the Cu layer and photoetching; 7), sputtering a Cr / Cu electroplating seed layer; 8), coating photoresist on the SU-8 dielectric layer, and photoetching; 9), electroplating microstrip line; 10), dissolving the positive photoresist with solvent, so that microstrip line devices with the SU-8 photoresist as the dielectric layer are released from glass or silicon slices.

Description

technical field [0001] The invention relates to RF MEMS manufacturing technology, in particular to a manufacturing method of a microstrip line. Background technique [0002] With the development of technology, radio technology is developing towards shorter and shorter millimeter waves and submillimeter waves. Millimeter waves are between microwave and light, and have the advantages of wide frequency range, high resolution, all-weather work, and easy integration. Therefore, they are widely used in military, communication, security and other fields. However, in the millimeter wave band, as the frequency increases, the requirements for processing accuracy are getting higher and higher. Traditional machining can no longer meet the requirements, and new processing technologies must be used, and MEMS micro-processing technology can meet the requirements of processing accuracy. . It has the advantages of high precision, good controllability, batch manufacturing, and compatibility...

Claims

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Application Information

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IPC IPC(8): H01P11/00B81C1/00
Inventor 李建华徐立新陈和峰卢冲赢
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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