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A Projection Optical System with Large Numerical Aperture

A technology of projection optical system and numerical aperture, which is applied in the field of projection optical system, can solve problems such as difficult processing or detection work, lack of object protection glass, inability to process or detect, etc., to facilitate high-precision processing and detection, and correct system image Poor, improve the effect of thermodynamics and other properties

Inactive Publication Date: 2016-04-27
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The use of aspheric surface in the optical system can greatly improve the imaging quality, but the asphericity of the optical system described in the above patent is too large, which will bring a lot of difficulties to the subsequent processing or inspection work, and even cannot be processed or inspected at all in severe cases.
In addition, the projection optical system described in the above patent lacks an object-side protective glass, which will cause great trouble in engineering

Method used

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  • A Projection Optical System with Large Numerical Aperture
  • A Projection Optical System with Large Numerical Aperture
  • A Projection Optical System with Large Numerical Aperture

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Embodiment Construction

[0027] The present invention will be further described in detail below in conjunction with the drawings and specific embodiments.

[0028] figure 1 This is a schematic diagram of the layout of the large numerical aperture projection optical system of the present invention. Twenty-five lenses and two mirrors are used in total, including a first lens group G1, a second lens group G2, and a third mirror group G3 from the incident direction of the beam , The fourth lens group G4 and the fifth lens group G5. The first lens group G1 is a parallel plate glass without refractive power; the second lens group G2 has positive refractive power; the third mirror group G3 has negative refractive power; the fourth lens group G4 has positive refractive power; the fifth lens Group G5 has positive refractive power. The image plane 28 is the surface of the silicon wafer.

[0029] The 25 refractive elements in the first lens group G1, second lens group G2, fourth lens group G4, and fifth lens group ...

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Abstract

The invention relates to a large numerical aperture projection optical system which is used for projecting the pattern on the object plane into the image plane after the pattern is scaled according to a certain proportion; the projection optical system is sequentially provided with five lens groups from the object plane to the image plane, wherein the first lens group is made of plate glass and is used as protective glass of the system; the second lens group is a pure refraction lens group and is used for projecting the pattern on the object plane into a first middle image plane; the third lens group comprises at least one concave reflecting mirror and is used for projecting the pattern on the first middle image plane into a second middle image plane; the fourth lens group and the fifth lens group are pure refraction lens groups and are used for projecting the pattern on the second middle image plane into the image plane. The immersed projection optical system can realize the numerical aperture which is more than 1, effectively reduces the manufacturing cost, and reduces the processing, detection and adjustment difficulty of lenses.

Description

Technical field [0001] The present invention relates to a projection optical system of a lithography device, in particular to a projection optical system with a large numerical aperture. Background technique [0002] Lithography is a very important process in the semiconductor manufacturing process. The projection optical system is a device used to scan and expose silicon wafers in the lithography process. The pattern on the mask is reduced by the projection optical system and then projected onto wafers such as wafers. Exposure is performed on the photosensitive substrate, and the quality of the exposure has a great influence on the entire etching process. In order to improve the resolution of the projection optical system, on the one hand, use ultraviolet light with a wavelength below 260nm as the light source of the exposure system; on the other hand, increase the image-side numerical aperture of the optical system as much as possible, if the image-side medium of the exposure s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B17/08G03F7/20
Inventor 邓超邢廷文廖志远朱红伟杨雄白瑜
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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