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Preparation method of porous oxide semiconductor nano-film

A porous oxide, nano-film technology, applied in nanotechnology, ion implantation plating, coating and other directions, can solve the problems of high sintering temperature, small specific surface area, large device size, etc., to achieve high sensitivity, large specific surface area, The effect of low operating temperature

Inactive Publication Date: 2013-12-18
XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the technical problems of high sintering temperature, small specific surface area and large device size in the existing preparation method of oxide gas-sensitive materials, the present invention provides a preparation method of porous oxide semiconductor nano-film

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Put the ZnO target and NaCl target in the co-sputtering chamber, and evacuate to 10 -4 Pa, Ar is introduced, the air pressure is kept at 1-4Pa, the substrate is deposited simultaneously by radio frequency sputtering, and a nanocomposite film with ZnO / NaCl two crystal phases is prefabricated. Then, the film is washed with water to dissolve the NaCl pore-forming agent to obtain a porous ZnO nano film. Finally, the porous film is dried and annealed to obtain a ZnO nano film with good crystallinity, high orientation and high porosity.

Embodiment 2

[0023] Metal Ti target and CaCl 2 The target is installed in the co-sputtering chamber, and the vacuum is evacuated to 10 -4 Pa, through Ar / O 2 =1:1 mixed gas, the air pressure is kept at 1~4Pa. For metallic Ti targets and CaCl 2 The target adopts DC sputtering and RF sputtering respectively, and deposits on the substrate at the same time, prefabricated with TiO 2 / CaCl 2 Nanocomposite films of two crystalline phases. Then wash the film with water, so that the CaCl 2 The pore-forming agent dissolves to obtain porous TiO 2 nano film. Finally, the porous TiO 2 The film is dried and annealed to obtain TiO with good crystallinity, high orientation and high porosity. 2 nano film.

Embodiment 3

[0025] SnO 2 The target and the NaCl target were installed in the co-sputtering chamber, and the vacuum was evacuated to 10 -4 Pa, pass through Ar, and keep the air pressure at 1-4Pa. Using radio frequency sputtering, alternately deposited on the surface of the substrate, prefabricated with SnO 2 / NaCl two crystal phase nanocomposite film, the thickness of the two layers is 10nm / (0.1-0.5nm) respectively, alternately deposited for 5-100 cycles. The sputtering power and time must be strictly controlled during deposition, so that NaCl forms a discontinuous island film, while SnO 2 The film layer is spread around the NaCl particles. After the deposition process, the film is washed with water to dissolve the NaCl pore-forming agent and obtain porous SnO 2 nano film. Finally, the porous SnO 2 The film is dried and annealed to obtain SnO with good crystallinity, high orientation and high porosity. 2 nano film.

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Abstract

The invention relates to a preparation method of a porous oxide semiconductor nano-film. The technical scheme of the preparation method is as follows: a film is simultaneously or alternately deposited on the surface of a substrate in the presence of Ar or a mixed atmosphere of Ar and O2 by using a co-sputtering technique and adopting an oxide semiconductor target (or a corresponding metal target) and a pore former target, then a composite nano-film with an oxide phase and a pore former phase is preformed, after the preformed composite film is washed by water, a pore former is dissolved, then a porous nano-film is obtained, finally, the film is dried and annealed to obtain a nano-film with good crystallinity, high orientation and high porosity.

Description

technical field [0001] The invention relates to a method for preparing a porous nano film, in particular to a method for preparing a porous oxide semiconductor nano film with high porosity and which can be used for gas sensing. Background technique: [0002] In industrial production and daily life, flammable, explosive and toxic gases pose a serious threat to safe production and people's health, which has aroused widespread concern. Accurate detection and quantitative analysis of flammable, explosive and toxic gases are of great significance to safe production and public health. [0003] Among the harmful gas detection methods, the oxide gas sensor has attracted widespread attention because of its convenient use, high sensitivity and low price. The principle of oxide gas-sensing sensing is: in the air, the surface of the oxide gas-sensing material adsorbs oxygen molecules in the air, and generates charge transfer to form chemically adsorbed oxygen O 2- , O - , O 2- , A s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/58B82Y40/00G01N27/12
Inventor 王浩静李涛涛王红飞刘欢杨利青胡炜杰
Owner XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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