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Composition for forming resist underlayer film and method for forming resist pattern using same

A technology of resist lower layer and composition, which is applied in the direction of photosensitive materials, coatings, and pattern surface photolithography for optomechanical equipment, and can solve the problems of no enlightenment and no record of binary polymers, etc.

Active Publication Date: 2016-06-29
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in these Patent Documents 1 and 2, there is neither description nor suggestion about a binary polymer obtained by polyaddition reaction of a bifunctional diglycidyl ester compound and bisphenol S or its derivatives.

Method used

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  • Composition for forming resist underlayer film and method for forming resist pattern using same
  • Composition for forming resist underlayer film and method for forming resist pattern using same
  • Composition for forming resist underlayer film and method for forming resist pattern using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0070] The weight average molecular weights shown in the following synthesis examples 1 to 3 are based on the measurement results of gel permeation chromatography (hereinafter, abbreviated as GPC in this specification). For the measurement, a GPC apparatus manufactured by Tosoh Corporation was used, and the measurement conditions are as follows.

[0071] GPC column: Shodex〔registered trademark〕Asahipak〔registered trademark〕(Showa Denko Co., Ltd.)

[0072] Column temperature: 40°C

[0073] Solvent: N,N-Dimethylformamide (DMF)

[0074] Flow rate: 0.6ml / min

[0075] Standard sample: Polystyrene (Tosoh Corporation)

[0076] Detector: RI

[0077]

[0078] 10.00 g of diglycidyl terephthalate (manufactured by Nagase Chemtex Co., Ltd., trade name: Denakor [registered trademark] EX711), 4.38 g of bisphenol S, 2.68 g of 2,4-dihydroxybenzoic acid, and Ethyl triphenyl bromide After dissolving 0.65 g in 70.90 g of propylene glycol monomethyl ether, it was made to react at 130 degr...

Embodiment 2

[0090] Into 10 g of a solution containing 2 g of the polymer obtained in Synthesis Example 2 above, 0.5 g of tetramethoxymethyl glycoluril (manufactured by Japan Cytech Industries Co., Ltd., trade name: Powerlink [registered trademark] 1174) and p-toluenesulfon were mixed. acid pyridinium 0.05 g was dissolved in 35.4 g of propylene glycol monomethyl ether and 18.6 g of ethyl lactate to prepare a solution. Then, filtration was performed using a polyethylene microfilter with a pore diameter of 0.10 μm, and further, a polyethylene microfilter with a pore diameter of 0.05 μm was used to prepare a composition for forming a resist underlayer film.

Embodiment 3

[0092] In 10 g of a solution containing 2 g of the polymer obtained in Synthesis Example 3 above, 0.5 g of tetramethoxymethyl glycoluril (manufactured by Japan Cytech Industries Co., Ltd., trade name: Powerlink [registered trademark] 1174) and p-toluenesulfon were mixed. acid pyridinium 0.05 g was dissolved in 35.4 g of propylene glycol monomethyl ether and 18.6 g of ethyl lactate to prepare a solution. Then, filtration was performed using a polyethylene microfilter with a pore diameter of 0.10 μm, and further, a polyethylene microfilter with a pore diameter of 0.05 μm was used to prepare a composition for forming a resist underlayer film.

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Abstract

The object of the present invention is that the object of the present invention is to obtain a method that has a high selectivity of dry etching rate and is useful for reducing LER, which is a big problem in EUV (wavelength 13.5nm) lithography, although it contains aromatic rings such as benzene rings. A composition for forming a resist underlayer film. Another object of the present invention is to obtain a composition for forming a resist underlayer film that forms a resist pattern on a resist underlayer film into a desired shape. As a method for solving the problem of the present invention, a composition for forming a resist underlayer film for photolithography is characterized in that it contains a polymer and a solvent, and the above polymer is obtained by mixing diphenyl sulfone or its derivatives through ether. Bonds are introduced into the main chain of the polymer.

Description

technical field [0001] The present invention relates to a method useful for forming a resist underlayer film between a substrate and a resist film formed on the substrate in order to obtain a resist pattern of a desired shape in a photolithography process in the process of manufacturing a semiconductor device. combination. Also, the present invention relates to a composition for forming a resist underlayer film suitable for a photolithography process using EUV exposure. Background technique [0002] As a material for forming a resist underlayer film for EUV exposure, a composition for forming a resist underlayer film in which the generation of outside air is reduced is disclosed (Patent Document 1). In addition, although not specifically a material for EUV exposure, a composition for forming a resist underlayer film containing a reaction product of a bifunctional diglycidyl ester compound and 2,4-dihydroxybenzoic acid is also disclosed (patent Document 2). However, in the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/11C08G59/62C08G65/40H01L21/027
CPCG03F7/11C08L67/04C09D167/04G03F7/00G03F7/091
Inventor 坂本力丸藤谷德昌远藤贵文大西龙慈何邦庆
Owner NISSAN CHEM IND LTD
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