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Resist underlayer film forming composition, and method for forming resist pattern using same

A technology of resist lower layer and composition, which is applied to photosensitive materials, coatings, and photoplate-making processes of patterned surfaces for optomechanical equipment, and can solve the problems of binary polymers that have no record and no inspiration

Active Publication Date: 2013-07-24
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in these Patent Documents 1 and 2, there is neither description nor suggestion about a binary polymer obtained by polyaddition reaction of a bifunctional diglycidyl ester compound and bisphenol S or its derivatives.

Method used

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  • Resist underlayer film forming composition, and method for forming resist pattern using same
  • Resist underlayer film forming composition, and method for forming resist pattern using same
  • Resist underlayer film forming composition, and method for forming resist pattern using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0070] The weight average molecular weights shown in the following synthesis examples 1 to 3 are based on the measurement results of gel permeation chromatography (hereinafter, abbreviated as GPC in this specification). For the measurement, a GPC apparatus manufactured by Tosoh Corporation was used, and the measurement conditions are as follows.

[0071] GPC column: Shodex〔registered trademark〕Asahipak〔registered trademark〕(Showa Denko Co., Ltd.)

[0072] Column temperature: 40°C

[0073] Solvent: N,N-Dimethylformamide (DMF)

[0074] Flow rate: 0.6ml / min

[0075] Standard sample: Polystyrene (Tosoh Corporation)

[0076] Detector: RI

[0077]

[0078] 10.00 g of diglycidyl terephthalate (manufactured by Nagase Chemtex Co., Ltd., trade name: Denakor [registered trademark] EX711), 4.38 g of bisphenol S, 2.68 g of 2,4-dihydroxybenzoic acid, and Ethyl triphenyl bromide After dissolving 0.65 g in 70.90 g of propylene glycol monomethyl ether, it was made to react at 130 degr...

Embodiment 2

[0090] Into 10 g of a solution containing 2 g of the polymer obtained in Synthesis Example 2 above, 0.5 g of tetramethoxymethyl glycoluril (manufactured by Japan Cytech Industries Co., Ltd., trade name: Powerlink [registered trademark] 1174) and p-toluenesulfon were mixed. acid pyridinium 0.05 g was dissolved in 35.4 g of propylene glycol monomethyl ether and 18.6 g of ethyl lactate to prepare a solution. Then, filtration was performed using a polyethylene microfilter with a pore diameter of 0.10 μm, and further, a polyethylene microfilter with a pore diameter of 0.05 μm was used to prepare a composition for forming a resist underlayer film.

Embodiment 3

[0092] In 10 g of a solution containing 2 g of the polymer obtained in Synthesis Example 3 above, 0.5 g of tetramethoxymethyl glycoluril (manufactured by Japan Cytech Industries Co., Ltd., trade name: Powerlink [registered trademark] 1174) and p-toluenesulfon were mixed. acid pyridinium 0.05 g was dissolved in 35.4 g of propylene glycol monomethyl ether and 18.6 g of ethyl lactate to prepare a solution. Then, filtration was performed using a polyethylene microfilter with a pore diameter of 0.10 μm, and further, a polyethylene microfilter with a pore diameter of 0.05 μm was used to prepare a composition for forming a resist underlayer film.

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Abstract

[Problem] The purpose of the present invention is to obtain a composition for forming a resist underlayer film, the composition having a high selectivity of the dry etching speed even though the composition contains an aromatic ring such as a benzene ring, and being useful in lowering LER which presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, the purpose of the present invention is to obtain a composition for forming a resist underlayer film, wherein the resist pattern on the resist underlayer film has a desired shape. [Solution] A resist underlayer film forming composition for lithography characterized by containing a polymer and a solvent, and by diphenyl sulfone or a derivative thereof being introduced into the main chain of the polymer via an ether bond.

Description

technical field [0001] The present invention relates to a method useful for forming a resist underlayer film between a substrate and a resist film formed on the substrate in order to obtain a resist pattern of a desired shape in a photolithography process in the process of manufacturing a semiconductor device. combination. Also, the present invention relates to a composition for forming a resist underlayer film suitable for a photolithography process using EUV exposure. Background technique [0002] As a material for forming a resist underlayer film for EUV exposure, a composition for forming a resist underlayer film in which the generation of outside air is reduced is disclosed (Patent Document 1). In addition, although not specifically a material for EUV exposure, a composition for forming a resist underlayer film containing a reaction product of a bifunctional diglycidyl ester compound and 2,4-dihydroxybenzoic acid is also disclosed (patent Document 2). However, in the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11C08G59/62C08G65/40H01L21/027
CPCG03F7/11C08L67/04G03F7/00C09D167/04G03F7/091
Inventor 坂本力丸藤谷德昌远藤贵文大西龙慈何邦庆
Owner NISSAN CHEM IND LTD
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