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Resist underlayer film formation composition having disulfide structure

A resist lower layer, resist film technology, applied in coating, photoengraving process coating equipment, pattern surface photoengraving process and other directions, can solve the problems of resist pattern collapse, processing, etc., achieve dry The effect of high etching speed

Pending Publication Date: 2020-09-15
NISSAN CHEM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, if the resist pattern has an undercut shape or a dragging shape, etc., collapse of the resist pattern will occur, and the object to be processed (substrate, insulating film, etc.) cannot be processed into a desired shape or size problem

Method used

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  • Resist underlayer film formation composition having disulfide structure
  • Resist underlayer film formation composition having disulfide structure
  • Resist underlayer film formation composition having disulfide structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0144] Hereinafter, the content of the present invention will be described more specifically by giving Examples and the like, but the present invention is not limited to the following aspects.

[0145] The apparatus used for the measurement of the weight average molecular weight of the polymer obtained in the synthesis example is shown below.

[0146] Device: HLC-8320GPC manufactured by Tosoh Corporation

[0147] GPC column: Shodex〔registered trademark〕Asahipak〔registered trademark〕(Showa Denko Co., Ltd.)

[0148] Column temperature: 40°C

[0149] Flow rate: 0.6mL / min

[0150] Eluent: N,N-dimethylformamide (DMF)

[0151] Standard sample: Polystyrene (Tosoh Corporation)

[0152]

[0153] 4.00 g of 1,3,5-tris(2,3-epoxypropyl)isocyanuric acid (product name: TEPIC-SS, manufactured by Nissan Chemical Co., Ltd.), 7.42 g of dithioglycolic acid, and triphenyl bromide 0.38 g and 47.19 g of propylene glycol monomethyl ether were put into a reaction flask, and heated and stirred a...

Embodiment 2

[0157] After adding 4.00 g of 1,3,5-tris(2,3-epoxypropyl)isocyanuric acid (product name: TEPIC-SS, manufactured by Nissan Chemical Co., Ltd.), 3,3'-dithio Dipropionic acid 8.56g, ethyl triphenyl bromide 0.38 g and 51.76 g of propylene glycol monomethyl ether were heated and stirred at 100° C. for 21 hours in a nitrogen atmosphere in a reaction flask to obtain a solution of a transparent reaction product. The reaction product corresponding to the formula (C-2) was obtained as a solution, and the weight average molecular weight Mw in terms of polystyrene measured by GPC was 5,700. In addition, a:b=100:300 (molar ratio) in formula (C-2).

[0158] Added 7.09 g of a solution (16.4% by weight of solid content) corresponding to the reaction product of the formula (C-2), and pyridinium trifluoromethanesulfonate as a crosslinking acid catalyst Salt 0.03g, surfactant (manufactured by DIC Co., Ltd., product name: Megafac [trade name] R-40, fluorine-based surfactant) 0.001g, propylene...

Embodiment 3

[0161] 4.00 g of 1,3,5-tris(2,3-epoxypropyl)isocyanuric acid (product name: TEPIC-SS, manufactured by Nissan Chemical Co., Ltd.), 3,3'-dithiodipropylene Acid 4.40g, glycolic acid 1.59g, ethyl triphenyl bromide 0.39 g and 41.51 g of propylene glycol monomethyl ether were put into the reaction flask, and heated and stirred at 100° C. for 15 hours in a nitrogen atmosphere to obtain a solution of a transparent reaction product. A reaction product corresponding to the formula (C-3) was obtained, and the weight average molecular weight Mw in terms of polystyrene measured by GPC was 1400. In addition, in formula (C-3), a:b:c=100:150:150 (molar ratio).

[0162] Added 6.41 g of a solution (18.2% by weight of solid content) corresponding to the reaction product of the formula (C-3), and pyridinium trifluoromethanesulfonate as a crosslinking acid catalyst Salt 0.03g, surfactant (manufactured by DIC Co., Ltd., product name: Megafac [trade name] R-40, fluorine-based surfactant) 0.001g,...

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Abstract

Provided are: a resist underlayer film having, in particular, a high dry etching speed; the resist underlayer film formation composition; a resist pattern formation method, and a method for manufacturing a semiconductor device. The resist underlay film formation composition contains: a bifunctional or higher compound having one or more disulfide bonds; a trifunctional or higher compound and / or a reaction product; and a solvent. The bifunctional or higher compound is preferably a dicarboxylic acid containing a disulfide bond. The trifunctional or higher compound is preferably a compound containing three or more epoxy groups.

Description

technical field [0001] In particular, the present invention relates to a composition for forming a resist underlayer film having a high dry etching rate, a resist underlayer film formed using the composition for forming a resist underlayer film, a method for producing the same, and a method for forming a resist pattern , and a method of manufacturing a semiconductor device. Background technique [0002] When exposing a resist film, reflected waves may adversely affect the resist film. The resist underlayer film formed to suppress this is also called an antireflection film. [0003] The resist underlayer film needs to be easily formed by applying a solution-form resist underlayer film-forming composition and curing it. Therefore, the composition needs to contain a compound (polymer) that can be easily cured by heating or the like and has high solubility in a predetermined solvent. [0004] The resist pattern formed on the resist underlayer film preferably has a rectangular...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11C08G59/42C08K5/372C08L63/00G03F7/20
CPCC08K5/372C08L63/00C08G59/42G03F7/094H01L21/0273H01L21/02118G03F7/11G03F7/168C08G59/4064C08G59/3245H01L21/027G03F7/20C09D179/04G03F7/16G03F7/30H01L21/0274
Inventor 远藤贵文后藤裕一染谷安信水落龙太上林哲
Owner NISSAN CHEM CORP
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