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Terahertz front-end integrated receiving device based on bulk silicon MEMS (micro-electromechanical system) technical antenna

A technology of a receiving device and an antenna, applied in the field of terahertz technology, can solve the problems of insufficient integration, difficult processing, large volume, etc., and achieve the effects of strong achievability, easy processing and manufacturing, and small volume

Inactive Publication Date: 2013-07-24
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a terahertz front-end integrated receiving device based on a bulk silicon MEMS process antenna in order to solve the problems of difficult processing, insufficient integration, large volume, and high cost of the terahertz front-end receiving device in the prior art

Method used

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  • Terahertz front-end integrated receiving device based on bulk silicon MEMS (micro-electromechanical system) technical antenna
  • Terahertz front-end integrated receiving device based on bulk silicon MEMS (micro-electromechanical system) technical antenna
  • Terahertz front-end integrated receiving device based on bulk silicon MEMS (micro-electromechanical system) technical antenna

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Embodiment 1

[0026] Terahertz front-end integrated receiving device based on bulk silicon MEMS antenna, mainly including antenna and mixer chip, base and backplane; antenna is H-plane horn antenna and planar ALTSA antenna uses WR1.9 waveguide (483um×241um) Or WR2.2 (559um×279um) VDI standard waveguide, which is bonded by two silicon wafers with a thickness of 400um.

[0027] The mixer chip is a superheterodyne detector, including a room temperature Schottky diode mixer, a superconducting tunnel junction mixer, and a thermal electron thermal resistance mixer; the external part of the base is reserved for chips, intermediate frequency terminals, etc. The physical matching position; the backplane also reserves space for physical matching with chips, intermediate frequency terminals, etc.;

[0028] Connection relationship:

[0029] The mixer chip is fixed at the end of the antenna waveguide through the connection hole between the mixer and the waveguide;

[0030] The backplane is a rectangul...

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Abstract

The invention relates to a terahertz front-end integrated receiving device based on a bulk silicon MEMS (micro-electromechanical system) technical antenna, and the device is suitable for terahertz low-frequency stage and belongs to the technical field of terahertz. The device mainly comprises an antenna, a mixer chip, a base and a back panel, wherein the antenna comprises an H-face horn antenna based on a bulk silicon MEMS and a plane gradually changing type plantar slot antenna (ALTSA in short); the mixer chip is a superheterodyne detector and comprises a room temperature schottky diode mixer, a superconductivity tunnel junction mixer, and a hot electron bolometric resistance mixer; the external part of the base remains the position which is in physical match with the chip and an intermediate frequency terminal and the like; and the back panel also remains the space which is in physical match with the chip and the intermediate frequency terminal. According to the device, the antenna is processed through the bulk silicon MEMS technology; the processing precision of the terahertz device can be satisfied; and the device is convenient to manufacture and produce in mass, and is easy to assemble. Through the integral assembling method of the antenna, the mixer and a bias circuit, the success ratio of micro-packaging the components is improved, the integration level of the integral receiving device is improved; and the device has the advantages of small size, light weight and low cost.

Description

technical field [0001] The invention relates to a terahertz front-end integrated receiving device based on a bulk silicon MEMS process antenna, which is suitable for terahertz low frequency bands and belongs to the technical field of terahertz. Background technique [0002] With the development of terahertz source and terahertz wave detection technology, terahertz technology has developed rapidly in the past ten years. The terahertz band is between microwave and infrared light, also known as far infrared (spectroscopy) and submillimeter wave (electronics). Terahertz waves have unique properties such as transientity, coherence, wide bandwidth, low photon energy, and strong penetration to non-metallic and non-polar materials. They have broad application prospects in imaging, detection, communication, and radio astronomy. In terms of terahertz imaging, different imaging systems adopt different imaging systems, including mechanical scanning plus rotating mirror, frequency scann...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01Q1/38H01Q1/22H01Q23/00B81C1/00
Inventor 刘埇司黎明卢宏达周凯赵鹏飞朱思衡
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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