Single crystal polycrystalline nano-diamond composite thin film and preparation method

A technology of nano-diamond and composite film, which is applied in crystal growth, nanotechnology, nanotechnology, etc.

Active Publication Date: 2016-04-06
INNER MONGOLIA UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

None of these composite methods can solve the problems existing in the above-mentioned nanodiamond film.

Method used

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  • Single crystal polycrystalline nano-diamond composite thin film and preparation method
  • Single crystal polycrystalline nano-diamond composite thin film and preparation method
  • Single crystal polycrystalline nano-diamond composite thin film and preparation method

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Embodiment 1

[0023] Embodiment 1: as figure 1 , figure 2 , image 3 , Figure 4 shown, where: figure 2 The thick border is the interface part, and the inside is the grain part; image 3 Particles 2 in are carbon (C) atoms represented by small circles, which form diamond grains, and the hollow and solid carbon (C) particles represent particles of different layers on the diamond (111) surface, respectively. image 3 Particle 1 in is silicon (Si) or germanium (Ge), boron (B) or aluminum (Al), phosphorus (P) or arsenic (As), or copper (Cu), gold ( Au), manganese (Mn) and other atoms, which combine with carbon (C) atoms in diamond to form an interface phase between crystal grains.

[0024] A single crystal polycrystalline nano-diamond composite film, the nano-diamond grain phase formed by carbon (C) particles 2 is separated by the interface phase formed by silicon (Si) particles 1, and the structure of the interface can be a replacement interface (such as image 3 ) or gap-type interfac...

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PUM

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Abstract

The invention relates to a single crystal type polycrystal nano-diamond composite film and a preparation method thereof, and belongs to the fields of ordered nano-diamond composite structure surface material engineering. The film is formed by crystalline grain phases and boundary phases; the boundary phases isolate the crystalline grain phases into nano-scale crystalline grains; and regular boundary phases are formed among the crystalline grain phases. The nano-diamond composite film belongs to single crystal type polycrystal composite structures. By changing the distribution of the boundary phases, the mechanical property, the electrical property, the optical property, the magnetic property and the thermal property of the composite film are improved. The single crystal type polycrystal nano-diamond composite film is prepared by implanting sequentially distributed seed crystals into the surface of a substrate, forming a diamond crystal nucleus by using microwave plasma gas phase deposition, co-depositing the crystalline grain phases and the boundary phases, growing the nano-diamond composite film, and conducting thermal treatment so as to eliminate film stress and homogenize the sizes of the crystalline grains.

Description

Technical field: [0001] The invention relates to a single-crystal polycrystalline nano-diamond composite film and a preparation method thereof, and belongs to the field of surface material engineering of an ordered nano-diamond composite structure. Background technique: [0002] Diamond is a material with special properties. It is the material with the highest hardness (about 90GPa) and the largest Young's modulus (1100GPa) in nature. It has the highest thermal conductivity (20W / cm.K at room temperature), sound transmission The speed is the fastest (18.2km / s), its light transmission frequency width is the widest (from 200nm ultraviolet light to microwave), its forbidden band width is large (5.4eV), and its hole mobility is large. Based on these characteristics, natural diamond, artificial diamond particles and diamond films have a wide range of applications. [0003] Compared with diamond single crystals synthesized by hydrostatic pressure, chemical vapor deposition (CVD) d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/44C30B29/04C30B28/14B82Y40/00B82Y30/00
Inventor 刘学杰张素慧孙士阳任元魏怀陆峰
Owner INNER MONGOLIA UNIV OF SCI & TECH
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