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Manufacturing method of semiconductor device

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems affecting the performance of semiconductor devices, inaccurate dimensions, etc., and achieve the effect of accurate feature size and avoidance of influence.

Active Publication Date: 2015-04-29
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the semiconductor devices formed by the above-mentioned prior art have the problem of inaccurate dimensions, which affects the performance of the semiconductor devices.
refer to Image 6 , the design size of the semiconductor device is Image 6 shown as S1, but the actual formed dimensions may be as Image 6 S2 shown
It can be seen from this that the actual size of the semiconductor formed by the existing technology may be larger than the designed size, thus affecting the performance of the semiconductor device

Method used

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  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device

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Embodiment Construction

[0038] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0039] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0040] As mentioned in the background section, the size of the semiconductor device formed by the above-mentioned prior art has the problem of inaccurate size, that is, the actual size of the formed semiconductor device may be larger than the designed size, thereby affecting the performance of the semiconductor device.

[0041] The inventor finds after analysis that the reason for the above-mentioned problems is that using the prior art, t...

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Abstract

The invention relates to a manufacturing method of a semiconductor device. The manufacturing method comprises the following steps of: providing a semiconductor substrate on which a dielectric layer, a first mask layer and a second mask layer are sequentially arranged; forming a side wall on the side surface of the second mask layer; forming a graphical photomask layer which covers the second mask layer, the side wall and the first mask layer; taking the graphical photomask layer as a mask, and sequentially etching the second mask layer, the first mask layer and the dielectric layer. The characteristic size of the formed semiconductor device can be precisely controlled, and the impact on the performance of the semiconductor device is avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor device. Background technique [0002] With the continuous development of semiconductor manufacturing technology, the feature size (CD, Critical Dimension) of semiconductor devices in integrated circuits is getting smaller and smaller, and the requirements for photolithography technology are also getting higher and higher. In order to ensure the feasibility of manufacturing smaller sizes, double patterning (Double Patterning) has become one of the potential solutions for precisely defining patterns at and below the 22nm node. [0003] Existing double patterning methods generally include three types: lithography-etch-lithography-etch (LELE, Litho-Etch-Litho-Etch), lithography-freeze-lithography-etch (LFLE, Litho-Etch Freeze-Litho-Etch), and spacer / self-aligned double exposure lithography (SADP, Spacer or self-aligned double-pattern...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027H01L21/311
Inventor 张海洋沈满华
Owner SEMICON MFG INT (SHANGHAI) CORP
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