Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method of semiconductor device

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems affecting the performance of semiconductor devices, inaccurate dimensions, etc., and achieve the effect of accurate feature size and avoidance of influence.

Active Publication Date: 2015-04-29
SEMICON MFG INT (SHANGHAI) CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the semiconductor devices formed by the above-mentioned prior art have the problem of inaccurate dimensions, which affects the performance of the semiconductor devices.
refer to Image 6 , the design size of the semiconductor device is Image 6 shown as S1, but the actual formed dimensions may be as Image 6 S2 shown
It can be seen from this that the actual size of the semiconductor formed by the existing technology may be larger than the designed size, thus affecting the performance of the semiconductor device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0039] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0040] As mentioned in the background section, the size of the semiconductor device formed by the above-mentioned prior art has the problem of inaccurate size, that is, the actual size of the formed semiconductor device may be larger than the designed size, thereby affecting the performance of the semiconductor device.

[0041] The inventor finds after analysis that the reason for the above-mentioned problems is that using the prior art, t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a manufacturing method of a semiconductor device. The manufacturing method comprises the following steps of: providing a semiconductor substrate on which a dielectric layer, a first mask layer and a second mask layer are sequentially arranged; forming a side wall on the side surface of the second mask layer; forming a graphical photomask layer which covers the second mask layer, the side wall and the first mask layer; taking the graphical photomask layer as a mask, and sequentially etching the second mask layer, the first mask layer and the dielectric layer. The characteristic size of the formed semiconductor device can be precisely controlled, and the impact on the performance of the semiconductor device is avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor device. Background technique [0002] With the continuous development of semiconductor manufacturing technology, the feature size (CD, Critical Dimension) of semiconductor devices in integrated circuits is getting smaller and smaller, and the requirements for photolithography technology are also getting higher and higher. In order to ensure the feasibility of manufacturing smaller sizes, double patterning (Double Patterning) has become one of the potential solutions for precisely defining patterns at and below the 22nm node. [0003] Existing double patterning methods generally include three types: lithography-etch-lithography-etch (LELE, Litho-Etch-Litho-Etch), lithography-freeze-lithography-etch (LFLE, Litho-Etch Freeze-Litho-Etch), and spacer / self-aligned double exposure lithography (SADP, Spacer or self-aligned double-pattern...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027H01L21/311
Inventor 张海洋沈满华
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com