P-type silicon back passive film of crystalline silicon solar cell and preparation method thereof

A technology for solar cells and backside passivation, which is applied to circuits, electrical components, semiconductor devices, etc., can solve the problems of low production capacity, slow deposition speed, and high process cost of preparation technology, and achieves simple preparation process, reduced processing cost, and low cost. Effect

Inactive Publication Date: 2013-03-13
TAITONG TAIZHOU IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the passivation film is deposited by atomic layer deposition technology, which has the problems of low production capacity, slow deposition speed and high process cost.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] First, conventional methods are used to clean silicon wafers and make texture; put p-type silicon wafers in a diffusion furnace, and heat them at 850 o Use phosphorus oxychloride to diffuse under C to obtain a PN junction; use HF to remove the phosphosilicate glass, remove the PN junction on the back and edges, and polish the back surface at the same time; use PECVD technology on the N-type emitter surface of the P-type silicon wafer Prepare SiNx anti-reflection layer.

[0018] On the magnetron sputtering equipment, Ar gas is used as the plasma enhanced gas to carry out sputtering bombardment on the high-purity (99.99%) Si target, and NH 3 , O 2 As a reactive gas, SiOxNy is sputter-deposited on the back surface of P-type silicon by reactive sputtering technology to achieve back field passivation.

[0019] The temperature of the above sputtering reaction is 300 o C, the Ar gas flow rate is 10sccm, the reaction pressure is 2.7Pa, N 2 The partial pressure is 0.9Pa, and...

Embodiment 2

[0021] First, conventional methods are used to clean silicon wafers and make texture; put p-type silicon wafers in a diffusion furnace, and heat them at 850 o Use phosphorus oxychloride to diffuse under C to obtain a PN junction; use HF to remove the phosphosilicate glass, remove the PN junction on the back and edges, and polish the back surface at the same time; use PECVD technology on the N-type emitter surface of the P-type silicon wafer Prepare SiNx anti-reflection layer.

[0022] Using PECVD technology to SiH 3 , NH 3 , N 2 O is used as a reactive gas to reactively deposit SiOxNy films on the back surface of P-type silicon to achieve back field passivation.

[0023] In the above deposition reaction, the reaction pressure is 200Pa, the total gas flow rate is 2000 sccm, the substrate temperature is 300°C, and the frequency is 40KHZ. During the deposition process, the initial flow ratio is 1:10:4. When the film thickness reaches 20nm, add NH 3 The flow rate ratio of the ...

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Abstract

The invention discloses a P-type silicon back passive film of a crystalline silicon solar cell and a preparation method thereof. The passive film is composed of upper and lower SiOxNy films; the first layer of SiOxNy film is an oxygen-rich SiOxNy film, and the second layer of SiOxNy film is a nitrogen-rich SiOxNy film. The P-type silicon back passive film of the crystalline silicon solar cell overcomes the damage of high-temperature oxidization to minority carrier lifetime of a silicon slice, and also avoids the effect of a positive charge on back surface passivation in an SiNx film, and thus greatly improving open-circuit voltage and conversion efficiency of the cell; and the preparation process is simple, the cost is low, the processing cost of the cell slice is greatly reduced, the production cost of the cell is reduced, and the large-scale industrial application is easily realized.

Description

technical field [0001] The invention relates to the technical field of crystalline silicon solar cells, in particular to a passivation film on the back of a p-type silicon of a crystalline silicon solar cell and a preparation method thereof. Background technique [0002] Reducing the production cost of solar cells and improving the efficiency of solar cells has always been the goal pursued by the solar cell industry. From the perspective of cost reduction, it is necessary to reduce the amount of silicon material used, that is, to reduce the thickness of the silicon wafer. However, as the thickness of the silicon wafer decreases, the influence of the surface state of the silicon wafer on the performance of the cell becomes more important. First, there are a large number of dangling bonds and surface states on the silicon wafer surface. It is necessary to passivate the surface of the silicon wafer to reduce the recombination rate of photogenerated carriers on the surface of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCY02P70/50
Inventor 鲁伟明
Owner TAITONG TAIZHOU IND
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