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Lanthanum strontium copper manganese sulfur oxygen diluted magnetic semiconductor material and preparation method thereof

A strontium-copper-manganese-sulfur-oxygen dilute magnetic and semiconductor technology, applied in the direction of material selection, can solve the problems of low ferromagnetic transition temperature and environmental pollution, and achieve the effect of high ferromagnetic transition temperature and broad application prospects.

Inactive Publication Date: 2014-07-16
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problems in the prior art that the ferromagnetic transition temperature (Curie temperature) of the dilute magnetic semiconductor is relatively low and may cause environmental pollution, the present invention provides a dilute magnetic semiconductor material with a higher Curie temperature and is environmentally friendly

Method used

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  • Lanthanum strontium copper manganese sulfur oxygen diluted magnetic semiconductor material and preparation method thereof
  • Lanthanum strontium copper manganese sulfur oxygen diluted magnetic semiconductor material and preparation method thereof
  • Lanthanum strontium copper manganese sulfur oxygen diluted magnetic semiconductor material and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0025] 1) La 2 o 3 , SrS, La, Cu, S and Mn powder and other raw materials are fully mixed according to the molar ratio of La, Sr, Cu, Mn, S, O and other elements 0.95: 0.05: 0.925: 0.075: 1: 1, and are carried out in an Ar gas protective atmosphere Grinding, then punching under a pressure of about 500MPa to obtain a tablet;

[0026] 2) The above-mentioned pressed tablet is sealed in a evacuated quartz tube, then put into a tube furnace and heated to 1223K for 2000 minutes, then calcined at 1223K for 2000 minutes, and then cooled to room temperature to obtain a polycrystalline block. lattice structure such as figure 1 shown.

[0027] From figure 2 It can be seen that the main phase of the sample obtained by the above process is La with a tetragonal structure (ZrCuSiAs type). 0.95 Sr 0.05 Cu 0.925 Mnn 0.075 SO compounds (main phase ≥ 99%). Except a small amount*, #marked SrS, (La, Sr)MnO 3 , MnS impurity phase (the impurity phase content is less than 1%), all X-ray ...

Embodiment 2

[0031] 1) La 2 o 3 , SrS, La, Cu, S and Mn powder and other raw materials are fully mixed according to the molar ratio of La, Sr, Cu, Mn, S, O and other elements 0.95:0.05:0.9:0.1:1:1, and carried out in an Ar gas protective atmosphere Grinding, then punching under a pressure of about 500MPa to obtain a tablet;

[0032] 2) Seal the above-mentioned pressed tablet in a vacuumized quartz tube, then put it into a tube furnace and heat up to 1273K for 2000 minutes, then calcined at 1273K for 2000 minutes, and then cooled to room temperature to obtain a polycrystalline block. lattice structure such as figure 1 shown.

[0033] The main phase of the sample obtained by the above process is the lanthanum strontium copper manganese disulfide magnetic semiconductor La with tetragonal structure. 0.95 Sr 0.05 Cu 0.9 mn 0.1 SO. From Figure 5 It can be known that the synthesized La 0.95 Sr 0.05 Cu 0.9 mn 0.1 SO dilute magnetic semiconductor material has very good ferromagnetic p...

Embodiment 3-7

[0035] Table 1 is La 1-x Sr x Cu 1-y mn y Raw material ratio, calcination temperature, ferromagnetic transition temperature and unit cell parameters of SO (x=0~0.1, y=0.05~0.1) samples.

[0036] Table 1

[0037]

[0038] Wherein, the sample La that embodiment 6 obtains 0.9 Sr 0.1 Cu 0.925 mn 0.075 SO contains a small amount of other ferromagnetic impurity phases, so the ferromagnetic transition temperature of its main phase is difficult to accurately determine, which is about 210K.

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Abstract

The invention discloses a lanthanum strontium copper manganese sulfur oxygen diluted magnetic semiconductor material of which the chemical formula is La1-xSrxCu1-yMnySO. The invention also discloses a preparation method of the lanthanum strontium copper manganese sulfur oxygen diluted magnetic semiconductor material. The preparation method comprises the following steps of: mixing raw materials; sufficiently grinding under the argon shield; subsequently stamping under certain pressure intensity; sealing an obtained tablet into a vacuum container; putting the container in a tubular furnace to be heated up; and further calcining in constant temperature so as to obtain the lanthanum strontium copper manganese sulfur oxygen diluted magnetic semiconductor material. According to the preparation method, a magnetic moment is introduced by using a method that Cu+ is replaced by Mn2+, subsequently the La is partially replaced by Sr so as to introduce a cavity type carrier, and through such doping, the electrical conductivity and the magnetism of the semiconductor can be controlled well, a diluted magnetic semiconductor in a ZrCuSiAs type structure with higher Curie temperature is obtained, the diluted magnetic semiconductor has very high ferromagnetic transformation temperature, the Curie temperature TC is increased to 199K, and the diluted magnetic semiconductor is free of toxic elements such as As.

Description

technical field [0001] The invention relates to the field of dilute magnetic semiconductor materials and their preparation, in particular to a lanthanum strontium copper manganese dioxygen dilute magnetic semiconductor material with a relatively high ferromagnetic transition temperature and a preparation method thereof. Background technique [0002] Diluted Magnetic Semiconductors (DMS) refers to artificially doping a small amount of magnetic atoms into non-magnetic semiconductor materials to obtain magnetic semiconductor materials. New semiconductor electronic devices. Due to the application potential in the field of spintronics, dilute magnetic semiconductors have attracted the attention of many researchers [T.Dietl, A ten-year perspective on dilute magnetic semiconductors and oxides.Nature Materials9, 965-974(2010).] . (Ga, Mn) As, (In, Mn) As, (Ga, Mn) N are typical III-V dilute magnetic semiconductors, replacing Ga or In with Mn can only obtain metastable compounds, a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/10
Inventor 许祝安杨小军曹光旱
Owner ZHEJIANG UNIV
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