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Method of preparing n-type counterfeit ternary erbium-doped thermoelectric material by utilizing mechanical alloying cold pressing sintering method

A technology of mechanical alloying and thermoelectric materials, applied in the field of preparing thermoelectric materials, can solve the problems of poor mechanical properties, easy splitting, high device production cost, reduce porosity, reduce splitting phenomenon, and low requirements for equipment and process conditions Effect

Inactive Publication Date: 2013-02-13
HARBIN NORMAL UNIVERSITY
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Problems solved by technology

[0003] The present invention provides a method for preparing n-type pseudo-ternary erbium-doped thermoelectric materials by mechanical alloying and cold pressing sintering in order to solve the technical problems of existing thermoelectric materials such as easy splitting, poor mechanical properties and high device production costs

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  • Method of preparing n-type counterfeit ternary erbium-doped thermoelectric material by utilizing mechanical alloying cold pressing sintering method
  • Method of preparing n-type counterfeit ternary erbium-doped thermoelectric material by utilizing mechanical alloying cold pressing sintering method
  • Method of preparing n-type counterfeit ternary erbium-doped thermoelectric material by utilizing mechanical alloying cold pressing sintering method

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specific Embodiment approach 1

[0021] Specific implementation mode one: In this implementation mode, the n-type pseudo-ternary erbium-doped thermoelectric material ((Bi 2 Te 3 ) 0.90 (Sb 2 Te 3 ) 0.05 (Sb 2 Se 3 ) 0.05 ) method is as follows:

[0022] 1. Weigh elemental Bi, elemental Sb, elemental Te and elemental Se according to the ratio of Bi element, Sb element, Te element and Se element molar ratio of 180:2:285:15, and elemental Bi, elemental Sb, elemental Te and Elemental Se is mixed, and then rare earth element Er is added to obtain a mixture. The amount of rare earth element Er added is 0.1% to 2.0% of the total mass of elemental Bi, elemental Sb, elemental Te, elemental Se and rare earth element Er, and the mixture is crushed to a particle size 1mm to 10mm, using petroleum ether as the ball milling medium, under the conditions of a rotating speed of 410r / min and a ball-to-material ratio of 10:1, mechanical ball milling for 100h to obtain alloy powder;

[0023] 2. Press the alloy powder int...

specific Embodiment approach 2

[0026] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the purity of the elemental Bi described in step 1 is 99.99%. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0027] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the purity of the elemental Sb in step 1 is 99.99%. Others are the same as in the first or second embodiment.

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Abstract

The invention discloses a method of preparing an n-type counterfeit ternary erbium-doped thermoelectric material by utilizing a mechanical alloying cold pressing sintering method, and relates to a method of preparing a thermoelectric material. The invention solves the technical problems of easiness in separation, poor mechanical property and high material cost of the conventional thermoelectric material. The method comprises the following steps of: 1, mixing a simple substance Bi, a simple substance Sb, a simple substance Te and a simple substance Se, adding a rare earth element Er, and ball-milling to obtain alloy powder; 2, cold-pressing the alloy powder to a block at room temperature; 3, placing the cold-pressing block obtained in the step 2 into a high-temperature-resistant glass tube, sintering, and cooling to room temperature along with a furnace so as to obtain the n-type counterfeit ternary erbium-doped thermoelectric material. The material, prepared by the method in the invention, has a thermoelectromotive force rate close to an oriented crystal, according to the national departmental standard, the Seebeck coefficient of the material is tested to reach 200 muVK<-1>, the conductivity is 55 omega<-1>cm<-1>, and a power factor is close to 2 muWcm<-1>K<-2>.

Description

technical field [0001] The invention relates to a method for preparing a thermoelectric material. Background technique [0002] Thermoelectric material is a new type of refrigeration material. Compared with traditional mechanical refrigeration, it has important advantages such as small size, light weight, no vibration, and no refrigerant. It is used in many small refrigerators, thermosensitive devices, and electric heating piles. field. N-type Bi, Sb, and Te alloys are excellent thermoelectric and magnetoelectric functional materials, and are important materials for the preparation of solid-state electric refrigeration devices and magnetoelectric appliances. Bi 2 Te 3 Compounds and their solid solutions are thermoelectric materials with high figure of merit at room temperature, and are widely used in thermoelectric refrigeration based on their excellent thermoelectric properties at room temperature. Its preparation method mainly adopts pulling method, vacuum smelting met...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/05H01L35/34H10N10/01
Inventor 王月媛曹显莹胡建民孟庆国
Owner HARBIN NORMAL UNIVERSITY
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