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Completely-crystallized multiferroic film without producing impure phase and preparation method thereof

A multiferroic and complete technology, used in chemical instruments and methods, layered products, metal layered products, etc., can solve the problems of inability to prepare complete crystals and no impurity phase, comprehensive performance decline, poor ferromagnetic performance, etc. Achieve low cost, improve ferroelectricity and ferromagnetism, and facilitate industrialization

Inactive Publication Date: 2013-01-23
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention is to solve existing BiFeO 3 (BFO)-based film has large leakage current, poor ferromagnetic properties, and reacts with Pt bottom electrode to form Bi 2 Alloys such as Pt, thus leading to the decline of its comprehensive performance and the existing method can not prepare the multiferroic film with complete crystallization and no impurity phase, and provide a multiferroic film with complete crystallization and no impurity phase and its preparation method

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  • Completely-crystallized multiferroic film without producing impure phase and preparation method thereof
  • Completely-crystallized multiferroic film without producing impure phase and preparation method thereof
  • Completely-crystallized multiferroic film without producing impure phase and preparation method thereof

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specific Embodiment approach 1

[0016] Specific Embodiment 1: In this embodiment, a multiferroic thin film with complete crystallization and no impurity phase is composed of barium strontium titanate-based sol and BFO-based sol on cleaned Pt / Ti / SiO 2 / Si(100) substrate prepared by spin coating method, thermal decomposition method and rapid annealing method.

[0017] The multiferroic thin film with complete crystallization and no impurity phases described in this embodiment can prevent the BFO-based thin film from reacting with the Pt bottom electrode, and is beneficial to obtain a multiferroic thin film with high crystallinity.

[0018] The multiferroic thin film with complete crystallization and no impurity phases described in this embodiment has no impurity phases, and effectively improves its multiferroic properties such as ferroelectricity and ferromagnetism.

specific Embodiment approach 2

[0019] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that the preparation method of the strontium barium titanate-based sol is carried out according to the following steps: ①Hydrolysis process: according to the chemical formula Ba x Sr 1-x A y Ti 1-y o 3 , according to the ratio of Ba element, Sr element, A element and Ti element molar ratio is x: (1-x): y: (1-y) the raw material that weighs joins the ratio that is made of ethylene glycol methyl ether, acetylacetone, ice In a mixed solvent composed of acetic acid and deionized water, stir at room temperature until fully dissolved to obtain a mixed solution for use; ②Dehydration process: Stir and mix polyethylene glycol 400 and acetic anhydride with the mixed solution prepared in step ①, and then in Stir continuously at 20-40°C for 0.5h-2h to obtain the barium strontium titanate-based solution to be prepared; ③polymerization process: let the barium-strontium titanate-based solutio...

specific Embodiment approach 3

[0020] Specific embodiment three: the difference between this embodiment and specific embodiment one is: the preparation method of the BFO-based sol is carried out according to the following steps: ①Hydrolysis process: according to the chemical formula Bi z B 1-z Fe k C 1-k o 3, the molar ratio of Bi element, B element, Fe element and C element is z: (1-z): k: (1-k) The ratio of raw materials weighed is added to ethylene glycol methyl ether, acetylacetone, In a mixed solvent composed of glacial acetic acid and deionized water, stir until fully dissolved at room temperature to obtain a mixed solution for use; ②Dehydration process: stir and mix polyethylene glycol 400 and acetic anhydride with the mixed solution prepared in step ①, and then Stir continuously at 20-40°C for 0.5h-2h to obtain the BFO-based solution to be prepared; ③polymerization process: put the BFO-based solution prepared in step ② at room temperature for 1-4 days to obtain BFO base sol; the volume ratio of ...

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Abstract

The invention provides a completely-crystallized multiferroic film without producing impure phase and a preparation method of the completely-crystallized multiferroic film. The invention relates to a multiferroic film and a preparation method of the multiferroic film, solving the problems of conventional BiFeO3 (BFO) based film and conventional method that the film is relatively high in current leakage, low in ferromagnetic performance, and is reacted with a Pt bottom electrode to obtain Bi2Pt alloy, so that the comprehensive performance is reduced, and the completely-crystallized multiferroic film without producing impure phase cannot be prepared by the conventional method. The completely-crystallized multiferroic film without producing impure phase is prepared by barium strontium titanate based sol and BFO based sol. The preparation method comprises the steps as follows: 1, preparing a film for a buffering layer; and 2, depositing a BFO based film, and then carrying out quick annealing technology so as to obtain the completely-crystallized multiferroic film without producing impure phase. The preparation method provided by the invention is mainly used for preparing the completely-crystallized multiferroic film without producing impure phase.

Description

technical field [0001] The invention relates to a multiferroic thin film and a preparation method thereof. Background technique [0002] With the advancement of science and technology, the requirements for device miniaturization are getting higher and higher, which requires the development of new materials with two or more functions at the same time, so as to develop new devices that can realize multiple functions at the same time. In recent years, multiferroic materials have new properties such as ferroelectricity and ferromagnetism due to their simultaneous ferroelectricity and ferromagnetism, and have new properties such as magnetoelectric effects due to the coupling between different ferrotypes. with broadly application foreground. At present, there are relatively few single-phase multiferroic materials that exist naturally, and BFO is a multiferroic material that can simultaneously possess ferroelectricity and ferromagnetism at room temperature. However, the following...

Claims

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Application Information

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IPC IPC(8): B32B15/04B32B18/00B32B33/00
Inventor 王春青李彬窦广彬
Owner HARBIN INST OF TECH
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