Texturization technology of solar battery

Abstract

The invention discloses a texturization technology of a solar battery, which adopts reactive ion etching, and comprises the following steps of: a. selecting the radio-frequency power of 25-30Kw, filling gases including Cl2, SF6 and O2 into a reaction cavity, and carrying out plasma bombardment on the surface of a silicon slice, wherein the technology time is 60-80s; b. selecting the radio-frequency power of 12-18Kw, filling gases including Cl2 and SF6 into the reaction cavity, and carrying out plasma bombardment on the surface of the silicon slice, wherein the technology time is 20-30s; and c. cleaning the silicon slice etched in the step by mixed liquid of HF, HNO3 and CH3COOH. Based on the original reactive ion etching (RIE) technology, one-step low radio-frequency power etching can be added, the plasma bombardment is carried out on the surface of the silicon slice, and the gases including Cl2 and SF6 are only filled in the process, so that Cl2 and SF6 have the function of effectively etching a damaged layer under the condition of low power radio frequency since the gas of O2 does not exist; and therefore, on the premise of guaranteeing the open-circuit voltage, the short-circuit current is improved, and higher component efficiency can be obtained.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a texturing process of solar cells which can reduce the damage layer of the etching process. Background technique [0002] Reactive Ion Etching (RIE for short) is an etching that combines physical ion bombardment and chemical reaction. This method has the dual advantages of anisotropy and high etching selectivity. The etching is mainly achieved by chemical reaction to obtain high selectivity. Adding ion bombardment has two functions: one is to destroy the atomic bond on the surface of the etched material to accelerate the reaction rate. The second is to knock off the product or polymer (Polymer) redeposited on the etched surface, so that the etched surface can be in contact with the etching gas again. The achievement of anisotropic etching depends on redeposited products or polymers, which are deposited on the etching pattern, and the deposits on the surface can be removed ...

AI Technical Summary

Problems solved by technology

In order to ensure production capacity in mass production, high RF power (>25KW) is used to increase the etching rate, but high RF power will cause high damage layer, resulting in loss of open circuit voltage