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Molybdenum aluminum molybdenum etching solution

An etching solution, molybdenum-aluminum technology, applied in the field of molybdenum-aluminum-molybdenum etching solution, can solve the problems of high overall viscosity of etching solution, uneven etching, low fluidity, etc., achieve excellent etching angle, ensure etching effect, no residue and low Effect

Inactive Publication Date: 2018-01-16
SHENZHEN CAPCHEM TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The molybdenum-aluminum-molybdenum etching solution disclosed in the above patent has the problems of high overall viscosity, low fluidity, easy local uneven etching and high cost.

Method used

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  • Molybdenum aluminum molybdenum etching solution
  • Molybdenum aluminum molybdenum etching solution
  • Molybdenum aluminum molybdenum etching solution

Examples

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Embodiment 1

[0035] The molybdenum-aluminum-molybdenum etching solution of the present embodiment is based on the total weight of the molybdenum-aluminum-molybdenum etching solution, including: phosphoric acid 40%, nitric acid 2%, glacial acetic acid 10%, additive 0.85%, and the balance is deionized water; Additives included 0.6% hydroxyethylene-1,1-diphosphonic acid, 0.1% triethanolamine, and 0.15% trisodium nitrilotriacetate. Embodiment two of the present invention is:

Embodiment 2

[0036] Only "based on the total weight of molybdenum aluminum molybdenum etching solution, including: 40% phosphoric acid, 2% nitric acid, 10% glacial acetic acid, 0.7% additives (0.3% amino trimethylene phosphonic acid, 0.1% triethanolamine and 0.3% hydroxyl Trisodium ethylenediamine tetraacetate), and the balance is deionized water" is different from Example 1, and others are all the same as Example 1.

Embodiment 3

[0038] Only "Based on the total weight of molybdenum aluminum molybdenum etching solution, including: 40% phosphoric acid, 2% nitric acid, 10% glacial acetic acid, 0.8% additives (0.45% diethylene triamine pentamethylene phosphonic acid, 0.05% N, N-dimethylformamide and 0.3% trisodium nitrilotriacetate), and the balance is deionized water" is different from Example 1, and others are the same as Example 1.

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Abstract

The invention relates to a molybdenum aluminum molybdenum etching solution. Based on a total weight, the molybdenum aluminum molybdenum etching solution comprises: 35-45% of phosphoric acid, 1-3% of nitric acid, 8-12% of glacial acetic acid, 0.5-1.0% of additives and 39-55.5% of deionized water. The additives comprise organic polybasic phosphonic acid substance, amine substance and salt substance.The molybdenum aluminum molybdenum etching solution provided by the invention can meet the customers' requirements for etching angle and etching amount, improves the product's excellent and good rate, at the same time greatly lowers the phosphoric acid content, and reduces the problem of uneven local etching caused by excessive phosphoric acid concentration.

Description

technical field [0001] The invention relates to chemical etching technology, in particular to a molybdenum-aluminum-molybdenum etching solution. Background technique [0002] In the prior art, the molybdenum-aluminum-molybdenum etching solution is mainly composed of nitric acid, phosphoric acid and acetic acid, and the proportion of phosphoric acid in the etching solution is relatively high. Molybdenum aluminum molybdenum etching solution has been widely used in thin film field effect transistor liquid crystal display (TFT-LCD), light emitting diode (LED) and organic light emitting diode (OLED) and other industries, specifically for the etching of molybdenum layer and aluminum layer in the process of making panels middle. The traditional technical formula shows better etching performance in terms of etching strength, etching angle and metal corrosion. However, the existing etching solution has high viscosity and poor fluidity, which easily causes problems such as local une...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/26C23F1/20
Inventor 康威鄢艳华尹静雅陈昊
Owner SHENZHEN CAPCHEM TECH CO LTD
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