Silicon carbide-carbon composite material and preparation method thereof

Abstract

The invention relates to a silicon carbide-carbon composite material and a preparation method of the composite material. The technical scheme is as follows: firstly stirring and mixing 50-90wt% of graphite, 5-40wt% of high silica glass and 1-10wt% of phenolic resin, wherein the mixing time is 2-30 minutes, compressing and forming the mixture, and naturally drying the mixture for 24 hours; thermally treating the dried mixture for 8-24 hours at 110-330 DEG C, keeping the temperature for 1-12 hours in a reducing atmosphere at 1300-1700 DEG C, naturally cooling the mixture; and finally crushing the mixture to particles and powder with grain size smaller than 10mm. The preparation method has simple preparation processes and relatively low cost; the prepared silicon carbide-carbon composite material not only has good heat-conducting property and electrical conductivity, but also has excellent melt corrosion resistance performance and osmosis resistance performance.

Description

technical field [0001] The invention belongs to the technical field of inorganic non-metallic materials. In particular, it relates to a silicon carbide-carbon composite material and a preparation method thereof. Background technique [0002] Non-oxide composite materials are one of the important directions for the development of high-temperature industrial materials. Among them, silicon carbide-carbon composites combine the advantages of silicon carbide and graphite, and have excellent high-temperature mechanical properties, oxidation resistance, thermal shock stability, high specific strength, high specific modulus, and non-brittle fracture characteristics. This type of composite material will have broad application prospects in aviation, aerospace, new energy, metallurgy, etc. [0003] The current methods for preparing SiC-C materials include: chemical vapor infiltration method, hot pressing method, precursor impregnation cracking method and liquid phase or gas phase si...

AI Technical Summary

Problems solved by technology

Although these methods can prepare SiC-C materials, they are demanding on equipment and resins, and the production cost is high, which is difficult for ordinary enterprises to afford, and there are certain difficulties in large-scale promotion.