Preparing method for Ti-Si alloy target materials

A manufacturing method and technology of titanium-silicon alloy, applied in the field of metallurgy, can solve the problems of composition segregation, poor alloy ductility, brittle cracks, etc., and achieve the effects of wide composition ratio, high yield and fine grain size

Inactive Publication Date: 2012-10-03
METALINK SPECIAL ALLOYS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Titanium-silicon alloy is an intermetallic compound. The titanium-silicon target prepared by the existing smelting method has disadvantages such as alloy brittleness and composition segregation. The amount of silicon added generally does not exceed 15% of the weight, and the ingot with more than 15% silicon added is prone to cracking , less than 15% silicon addition is easy to produce composition segregation and brittle cracks, and the poor ductility of the alloy also makes it difficult to cold and hot processing, so titanium silicon alloy targets are difficult to prepare by melting and casting
The hot isostatic pressing method also limits its application in the preparation of titanium-silicon targets due to the high manufacturing cost and the difficulty in selecting materials for the jacket.

Method used

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  • Preparing method for Ti-Si alloy target materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0018] Embodiment 1: choose titanium powder with a purity of 99.9%, silicon powder with a purity of 99.99%, the average particle size of titanium powder is 42 μm, and the average particle size of silicon powder is 32 μm. Into the mixer, the mixing time is 9 hours. Put the mixed powder into the graphite mold, the size of the graphite mold is Ф300x300, the wall thickness is 20mm, then put it into the vacuum hot pressing furnace, apply 5MPa pressure to the upper and lower pressure heads for pre-compression, and then the vacuum system starts to vacuum, when the vacuum degree When it reaches 1*10-2Pa, raise the temperature to 650°C, keep it warm for 2 hours, then quickly raise the temperature to 1000°C, the heating rate is 70°C / min, and pressurize to 10MPa, keep it warm for 4 hours, stop heating, and take it out of the furnace after cooling with the furnace. Machined to get the final 90 / 10 titanium silicon round target.

Embodiment approach 2

[0019] Embodiment 2: choose titanium powder with a purity of 99.95%, silicon powder with a purity of 99.99%, the average particle size of titanium powder is 62 μm, and the average particle size of silicon powder is 40 μm. Into the mixer, mixing time 1 hour. Put the mixed powder into the graphite mold, the size of the graphite mold is Ф350x350, the wall thickness is 20mm, and then put it into the vacuum hot pressing furnace, apply 10MPa pressure to the upper and lower pressure heads for pre-compression, and then the vacuum system starts to vacuum, when the vacuum degree When it reaches 1*10-2Pa, raise the temperature to 700°C, keep it warm for 3 hours, then rapidly raise the temperature to 1100°C, the heating rate is 80°C / min, and pressurize to 40MPa, keep it warm for 2 hours, stop heating, and take it out of the furnace after cooling with the furnace. Machined to get the final 70 / 30 titanium silicon round target.

Embodiment approach 3

[0020] Embodiment 3: choose titanium powder with a purity of 99.99%, silicon powder with a purity of 99.91%, the average particle size of titanium powder is 80 μm, and the average particle size of silicon powder is 100 μm. Pack into the mixer, and the mixing time is 7 hours. Put the mixed powder into the graphite mold, the size of the graphite mold is Ф400x400, the wall thickness is 20mm, and then put it into the vacuum hot pressing furnace, apply 15MPa pressure to the upper and lower pressure heads for pre-compression, and then the vacuum system starts to vacuum, when the vacuum degree When it reaches 1*10-2Pa, raise the temperature to 750°C, keep it warm for 4 hours, then quickly raise the temperature to 1300°C, the heating rate is 100°C / min, and pressurize to 80MPa, keep it warm for 6 hours, stop heating, and take it out of the furnace after cooling , machining to get the final 50 / 50 titanium silicon round target.

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Abstract

The invention discloses a preparing method for Ti-Si alloy target materials. According to the method, silica powder and titanium powder are taken as raw materials, are mixed mechanically according to a certain proportion, filled into a graphitic mould, and are treated with vacuum induction hot pressing sintering to prepare the Ti-Si alloy target materials with different ingredients and sizes. The Ti-Si alloy target materials prepared according to the method has the advantages that the grains are fine; the ingredients are uniform; segregation is avoided; the cost is low; the density is high; and mass production is realized.

Description

technical field [0001] The invention relates to the field of metallurgy, in particular to a method for manufacturing a titanium-silicon alloy target. Background technique [0002] Physical vapor deposition (PVD) technology is to vaporize solid materials into gaseous atoms, molecules or parts into ions under vacuum conditions, and deposit a thin film with certain special functions on the surface of the substrate through a low-pressure gas (or plasma) process. technology. The main methods of physical vapor deposition are evaporation, sputtering, and ion plating. Chemical vapor deposition (CVD) is also widely used as a kind of coating process, but in general, compared with CVD, PVD has low process temperature, short production cycle, no pollution, and the surface of PVD coating layer has better metallic luster and thin film thickness. , high hardness, stable chemical properties, small friction coefficient and many other advantages, it is gradually popularized in the fields o...

Claims

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Application Information

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IPC IPC(8): B22F3/14C23C14/06
Inventor 马步洋王彬
Owner METALINK SPECIAL ALLOYS CORP
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