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Surface modifying method for improving surface power function of indium tin oxide transparent conductive film

A technology of transparent conductive film and surface work function, which is applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems of limited space, degradation, uncontrollable, etc., to improve luminous brightness and light efficiency, improve surface work function, The effect of prolonging the life of the device

Inactive Publication Date: 2012-07-25
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In essence, ultraviolet light and ozone only play the role of cleaning the organic impurities on the ITO surface, and cannot substantially improve the work function of the ITO surface, and the effect is very limited; in theory, acid cleaning can change the polarity of the ITO surface to a certain extent and improve the surface work, but the experimental The effect is not significant, and some acid treatment results are even counterproductive; while the oxygen-containing plasma bath can clean the organic impurities on the ITO surface, it increases the terminal oxygen content on the ITO surface and enhances the surface polarization, thereby improving the ITO surface work function to a limited extent. Such as the Chinese invention patent CN200510004470.6 and the Japanese patent JP2006345377, however, the increase of the terminal oxygen content of the ITO surface through the oxygen-containing plasma bath is restricted by the surface chemical balance, and the improvement space is very limited, and it is uncontrollable. , the ITO surface treatment effect degrades in a very short time
Even if the OLED device is prepared immediately after the treatment, the result is still very unsatisfactory, and the oxygen atoms that are not firmly bonded on the ITO surface will penetrate into the organic material, destroying the photoelectric properties of the organic material, especially the organic light-emitting material. Fluorescence properties, since oxygen is the strongest fluorescence quencher

Method used

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  • Surface modifying method for improving surface power function of indium tin oxide transparent conductive film
  • Surface modifying method for improving surface power function of indium tin oxide transparent conductive film
  • Surface modifying method for improving surface power function of indium tin oxide transparent conductive film

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Embodiment 1

[0019] The present invention increases the ITO surface O / (Sn+In) atomic ratio by means of plasma immersion ion implantation, and improves the ITO surface work function to the matching level with the HOMO energy level of the HTL of the OLED device, and uses this high surface work function ITO As an anode to prepare an OLED device, the overall performance of the device can be improved, such as increased light efficiency and brightness, and extended life. The specific process includes oxygen plasma generation, ITO surface cleaning treatment, and ion implantation treatment. The specific operation steps are as follows:

[0020] 1. Clean the ITO surface by ultrasonic bath of acid and deionized water respectively, remove surface pollutants, and dry for later use.

[0021] 2. Put the cleaned and dried ITO on the horizontal substrate table in the vacuum chamber, with the ITO film upward, and close the vacuum chamber.

[0022] 3. Turn on the vacuum pump to pump air, and the background...

Embodiment 2

[0032] 1. Clean the ITO surface by ultrasonic bath of acid and deionized water respectively, remove surface pollutants, and dry for later use.

[0033] 2. Put the cleaned and dried ITO on the horizontal substrate table in the vacuum chamber, with the ITO film upward, and close the vacuum chamber.

[0034] 3. Turn on the vacuum pump to pump air, and the background vacuum reaches -3 Pa, fill the vacuum chamber with pure oxygen to >10 3 Pa dilute the background, turn off the oxygen, and pump again to -3 Pa.

[0035] 4. Inflate with oxygen, adjust the oxygen flow rate to 50 sccm, and adjust the valve of the vacuum pipeline to stabilize the air pressure at 5Pa.

[0036] 5. Turn on the radio frequency power supply and adjust the power to 200W. The radio frequency power is coupled from the quartz window directly above the substrate stage to the vacuum chamber through the mosquito-repellent coil antenna, and the gas discharge is excited to generate plasma. The substrate stage carryin...

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Abstract

The invention belongs to the technical filed of conductive thin films, in particular relates to a surface modifying method for improving the surface power function of an indium tin oxide transparent conductive film. The surface modifying method comprises the following steps: a large volume of plasma, containing oxygen, chlorine, or fluorine strong electric negative elements, is generated in a vacuum chamber in a radio frequency or microwave discharge excitation way; sheet glass coated with an indium tin oxide (ITO) thin film is placed on a metal substrate bench which is dipped in the plasma; high voltage negative pulses are applied on the substrate bench, thus forming a negative voltage sheath layer between the ITO thin film and the plasma; oxygen ions are accelerated by an electric field to move toward the surface of the ITO thin film in the sheath layer; and high-energy oxygen ions are injected to the surface of the ITO thin film and reserved in a surface layer of the ITO thin film, so that O / (Sn+In) atom proportion of the surface of the ITO thin film is increased, and then the surface power function of the ITO thin film is improved. The ITO thin film modified by the surface modifying method provided by the invention is applied as an anode of an organic light emitting diode (OLED), in this way, the drive voltage of a component is reduced greatly, the current stability of the component is improved, the light efficiency and brightness are enhanced, and the service life of the component is prolonged.

Description

technical field [0001] The invention belongs to the technical field of conductive thin films, and in particular relates to a method for modifying the surface of an indium tin oxide transparent conductive film. Background technique [0002] Indium tin oxide (ITO) transparent conductive film has both excellent conductivity and transparency, and is widely used as the anode of OLEDs and the hole-collecting electrode of solar cells, as well as the light-transmitting window. However, the surface work function of the ITO transparent conductive film prepared by various methods is about 1eV lower than the highest electron-occupied orbital (hereinafter referred to as HOMO) of the hole transport layer (hereinafter referred to as HTL) of the OLED, and holes must overcome the 1eV barrier height to inject into OLED The interior of the device is difficult, and a high voltage needs to be applied to the OLED device, and the hole injection efficiency is not high, resulting in low luminous int...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56
Inventor 区琼荣梁荣庆何龙高欢忠
Owner FUDAN UNIV
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