Structure of silicon-substrate GaN-based light-emitting diode (LED) and manufacturing method for silicon-substrate GaN-based LED

A LED structure and LED device technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of sapphire substrate processing difficulty, high cost, total reflection effect of GaN material and air interface and deterioration of LED light-emitting characteristics, etc., to achieve Good electrical and thermal conductivity, good processing characteristics, and good uniformity of white light

Inactive Publication Date: 2012-06-13
ADVANCED OPTRONIC DEVICES CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the present invention provides a GaN-based LED structure on a Si (silicon) substrate and a manufacturing method thereof, so as to overcome the difficulty in processing and high cost of using a sapphire substrate in the prior art, and only flat substrates can be produced. , so that the epitaxial structure of the grown GaN LED is a planar structure, and the total reflection effect of the interface between the GaN material and the air seriously deteriorates the light-emitting characteristics of the LED

Method used

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  • Structure of silicon-substrate GaN-based light-emitting diode (LED) and manufacturing method for silicon-substrate GaN-based LED
  • Structure of silicon-substrate GaN-based light-emitting diode (LED) and manufacturing method for silicon-substrate GaN-based LED
  • Structure of silicon-substrate GaN-based light-emitting diode (LED) and manufacturing method for silicon-substrate GaN-based LED

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Embodiment 1

[0076] like figure 2 As shown, the surface of the Si substrate is the (100) crystal plane of Si, that is, the non-(111) crystal plane is the (100) crystal plane. Wherein the Si substrate may be insulating or highly doped conductive Si.

[0077] A mask is made on the (100) crystal plane 1 of the Si substrate, and the mask can be a strip mask, a rectangle, a parallelogram, or a square mask. In the first embodiment disclosed by the present invention is used as Figure 4 For the strip mask 8 shown, the width of the strip mask 8 is 20 microns, the mask pitch is 20 microns, and the side length direction of the strip mask is parallel to the crystal orientation of the Si substrate. It should be noted that the present invention is not limited to the width and pitch of the mask.

[0078] Based on the strip mask 8, the (111) system crystal plane 2 of the Si substrate is corroded and exposed by using an etching solution that has a selective etching effect on the (111) system c...

Embodiment 2

[0095] like Figure 7 As shown, the surface of the Si substrate is the (110) crystal plane of Si, that is, the non-(111) crystal plane is the (110) crystal plane 11 . Wherein the Si substrate may be insulating or highly doped conductive Si.

[0096] A mask is made on the (110) crystal plane 11 of the Si substrate, and the mask can be a strip mask, a rectangle, a parallelogram, or a square mask. In the second embodiment disclosed by the present invention is used as Figure 4 As shown in the strip mask 8, the width of the strip mask 8 is 20 microns, the mask pitch is 20 microns, and the side length direction of the strip mask 8 is parallel to the system crystal direction of the Si substrate . It should be noted that the present invention is not limited to the width and pitch of the mask.

[0097] Based on the strip mask 8, the (111) system crystal plane 2 of the Si substrate is etched and exposed by using an etching solution that has a selective etching effect on th...

Embodiment 3

[0106] On the basis of the embodiments disclosed in the present invention above, as Figure 9 As shown, the surface of the Si substrate is the (100) crystal plane 1 of Si, and a mask is carried out on the (100) crystal plane 1 of the Si substrate. The mask is as follows Figure 8 As shown in the square mask 12, the width of the square mask 12 is 100 microns, the mask spacing is 440 microns, and the side length direction of the square mask 12 is parallel to the crystal orientation of the Si substrate. It should be noted that the present invention is not limited to the width and pitch of the mask.

[0107] Based on the square mask 12, the (111) system crystal plane 2 of the Si substrate is corroded and exposed by using an etchant that has a selective etching effect on the (111) system crystal plane 2 of Si, and the exposed (111) system crystal plane There are at least two planes 2, and the (111) crystal planes may or may not intersect each other.

[0108] The etching ...

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Abstract

The invention discloses a structure of a Si-substrate GaN-based light-emitting diode (LED) and a manufacturing method for the silicon-substrate GaN-based LED. The silicon-substrate GaN-based LED mainly comprises a Si substrate of which the surface is a non-(111) series crystal plane of Si, more than two (111) series crystal planes of the Si which are exposed on the non-(111) series crystal plane and form preset angles with the non-(111) series crystal plane, and a GaN-based LED extension structure which is grown on the (111) series crystal planes. Based on the advantages of high processing property, high electricity conduction performance and high heat conduction performance of the Si, the GaN-based LED extension structure is grown on a substrate plane with a certain angle by using the Si as the substrate, so that the GaN-based LED extension structure has a large light-emitting area; and interfaces are provided according to the different inclination angles of the substrate, so that the influence of the interfaces on the emergent light full-reflection effect of the GaN-based LED extension structure is weakened, the light-emitting efficiency of the LED can be improved, high white light uniformity can be obtained, and high emergent light quality can be obtained.

Description

technical field [0001] The present invention relates to the field of LED (Light Emitting Diode, light emitting diode) manufacturing, and more specifically relates to a Si (silicon) substrate gallium nitride GaN-based LED structure and a manufacturing method thereof. Background technique [0002] Since entering the 21st century, the emerging concept of energy saving and environmental protection has also begun to heat up in the LED (Light Emitting Diode, light emitting diode) industry. The white light LED technology based on GaN (gallium nitride)-based LEDs has also developed rapidly. The light source efficiency of white LED single light using GaN blue LED chip as excitation source has reached more than 130 lumens / watt, far exceeding the light efficiency of ordinary energy-saving lamps. LED technology has begun to fully enter the general lighting market. With the further expansion of the application range of GaN-based LEDs, the requirements for the luminous efficiency of LED ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/16
Inventor 刘凯孙夕庆
Owner ADVANCED OPTRONIC DEVICES CHINA
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