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Preparation method for back contact type silicon solar cell

A silicon solar cell and back contact technology, which is applied in the manufacture of circuits, electrical components, and final products, can solve problems affecting the mechanical strength of devices, complex manufacturing processes, and broken silicon wafers, so as to improve photoelectric conversion efficiency and simplify the manufacturing process. , the effect of reducing the fragmentation rate

Active Publication Date: 2013-12-04
CSI CELLS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this technology avoids the shading loss caused by the front electrode, in order to ensure that the current on the light-receiving surface is transmitted to the back without loss, tens of thousands of holes need to be set, and high-concentration doping needs to be formed in the holes. These conditions have led to its preparation. The process is very complicated and the cost is high; at the same time, too many holes also affect the mechanical strength of the device, and a large number of silicon wafers will be broken during production

Method used

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  • Preparation method for back contact type silicon solar cell
  • Preparation method for back contact type silicon solar cell
  • Preparation method for back contact type silicon solar cell

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Embodiment 1

[0040] see Figure 1~9 Shown, a kind of preparation method of back contact silicon solar cell, silicon chip is p-type, comprises the following steps:

[0041] The first step is texturing, the purpose of which is to form an uneven structure on the surface of the original bright silicon wafer through chemical reaction to prolong the propagation path of light on its surface, thereby improving the absorption of light by the silicon wafer 1; the silicon wafer after texturing The schematic diagram of the structure is as figure 1 shown;

[0042] The second step is to open holes 4 on the silicon wafer, the number of which is 100. Its function is to set electrodes in the holes 4 to lead the current from the light-receiving surface of the battery sheet to the backlight surface of the battery sheet, so that the positive electrode of the battery sheet Both the negative electrode and the negative electrode are located on the back of the cell; the holes can be opened by laser, mechanical...

Embodiment 2

[0052] A method for preparing a back-contact silicon solar cell, the silicon wafer is n-type, comprising the steps of:

[0053] The first step is texturing; its purpose is to form an uneven structure on the surface of the originally bright silicon wafer through chemical reaction to prolong the propagation path of light on its surface, thereby improving the absorption of light by the silicon wafer;

[0054] The second step is to open holes on the silicon wafer, the number of which is 60, and its function is to set electrodes in the through holes to lead the current from the light-receiving surface of the battery to the backlight surface of the battery, so that the positive electrode and the backlight of the battery can be connected. The negative electrodes are all located on the back of the battery sheet; in this embodiment, laser, mechanical drilling or chemical etching can be used to open holes;

[0055] The third step is to screen-print boron-containing paste on the surface ...

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Abstract

The invention discloses a preparation method for back contact type silicon solar cell, which comprises the following steps of: (1) etching texture on the illuminated surface of silicon chips, and setting holes; (2) coating, diffusing and forming junctions on the illuminated surface of the silicon chips; forming PN junctions on the illuminated surface and in the holes; (3) setting transparent heat conducting film on the PN junctions on the illuminated surface and in the holes; (4) etching the circumference; plating antireflection films on the transparent heat conducting film on the illuminated surface of silicon chips; and (5) preparing through hole electrode, back metal electrode and back passivation field on the non-plating film surface of the silicon chips to obtain the back contact type silicon solar cell; and the through hole electrode is electrically communicated with the transparent conducting film. The illuminated surface of the back contact type silicon solar cell is not covered by electrode, so shading loss is avoided and the photoelectric conversion efficiency is greatly improved. The quantity of to-be-opened holes is greatly reduced so as to dramatically reduce the fragmentation rate and simplify the preparation processes.

Description

technical field [0001] The invention relates to a method for preparing a back-contact silicon solar cell, belonging to the field of crystalline silicon solar cell manufacturing. Background technique [0002] Conventional fossil fuels are being exhausted day by day. Among the existing sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. At present, among all solar cells, silicon solar cells are one of the solar cells that have been widely commercialized. This is due to the extremely abundant reserves of silicon materials in the earth's crust. With excellent electrical and mechanical properties, silicon solar cells occupy an important position in the field of photovoltaics. Therefore, developing cost-effective silicon solar cells has become one of the main research directions of photovoltaic companies in various countries. [0003] The power generation principle of silicon solar cells is based on the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 吴坚王栩生章灵军
Owner CSI CELLS CO LTD
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