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Manufacturing method of semiconductor laser

A manufacturing method and laser technology, applied to the structure of optical resonant cavity, etc., can solve the problems of inability to effectively reduce cavity surface absorption and high optical power density of lasers, so as to improve the optical catastrophe damage threshold, reduce light absorption, Effect of Reducing Lasing Threshold Current Density

Inactive Publication Date: 2011-12-28
苏州纳睿光电有限公司
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Problems solved by technology

[0004] In order to improve the optical catastrophe damage threshold of lasers, it is common practice in the world to deposit a passivation layer on the cavity surface of GaAs-based and InP-based lasers, such as Ga 2 o 3 , Si, ZnSe, etc., and then coat the cavity surface of the laser, and directly coat the cavity surface of the GaN-based laser. This method does not remove the defects caused by cleavage of the laser. There are still many dangling bonds on the cavity surface of the laser. The optical power density at the cavity surface of the laser is very high, which cannot effectively reduce the cavity surface absorption of the laser

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  • Manufacturing method of semiconductor laser
  • Manufacturing method of semiconductor laser

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Embodiment 1

[0034] In this embodiment, a 450nm blue ridge-type GaN-based laser is used. The active region 1 of the laser is an InGaN / GaN multiple quantum well, and the current is injected from the ridge region 2 . Refer to the specific operation flow chart figure 1 , the implementation steps include:

[0035] (1) Using photoetching technology, using photoresist as a mask, using such as figure 2 As shown in the photolithography plate, the ridge region 2 of the laser is etched by ion beams on the laser epitaxial wafer, such as Figure 4 shown. Different lasers have different widths of the ridge-shaped region 2, generally ranging from 1-200 μm, and the width of the ridge-shaped region 2 in this embodiment is 5 μm.

[0036] (2) Using photoetching technology, photoresist is used as a mask near the front and rear cavity surfaces of the laser, and ions are implanted near the front and rear cavity surfaces of the laser from a direction perpendicular to the exit cavity surface of the laser th...

Embodiment 2

[0047] In this embodiment, a 450nm blue ridge-type GaN-based laser is used. The active region 1 of the laser is an InGaN / GaN multiple quantum well, and the current is injected from the ridge region 2 . Refer to the specific operation flow chart figure 1 , the implementation steps include:

[0048] (1) Using photoetching technology, using photoresist as a mask, using such as figure 2 As shown in the photolithography plate, the ridge region 2 of the laser is etched by ion beams on the laser epitaxial wafer, such as Figure 4 shown. Different lasers have different widths of the ridge-shaped region 2, generally ranging from 1-200 μm, and the width of the ridge-shaped region 2 in this embodiment is 5 μm.

[0049] (2) Using photoetching technology, photoresist is used as a mask near the front and rear cavity surfaces of the laser, and ions are implanted near the front and rear cavity surfaces of the laser from a direction perpendicular to the exit cavity surface of the laser th...

Embodiment 3

[0059] In this embodiment, a 450nm blue ridge-type GaN-based laser is used. The active region 1 of the laser is an InGaN / GaN multiple quantum well, and the current is injected from the ridge region 2 . Refer to the specific operation flow chart figure 1 , the implementation steps include:

[0060] (1) Using photoetching technology, using photoresist as a mask, using such as figure 2 As shown in the photolithography plate, the ridge region 2 of the laser is etched by ion beams on the laser epitaxial wafer, such as Figure 4 shown. Different lasers have different widths of the ridge-shaped region 2, generally ranging from 1-200 μm, and the width of the ridge-shaped region 2 in this embodiment is 5 μm.

[0061] (2) Using photoetching technology, photoresist is used as a mask near the front and rear cavity surfaces of the laser, and ions are implanted near the front and rear cavity surfaces of the laser from a direction perpendicular to the exit cavity surface of the laser th...

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Abstract

The invention relates to semiconductor laser technology, in particular to a manufacturing method of a semiconductor laser. The steps include: etching a ridge-shaped region (2) on the surface of the laser epitaxial wafer; using photolithography technology, implanting ions near the front and rear cavity surfaces of the laser; Evaporate a P-type contact electrode (5) above the ridge region (2) of the laser; evaporate an N-type contact electrode (8) after thinning the substrate of the laser; obtain a laser bar after cleavage; An anti-reflection film (6) and a high-reflection film (7) are evaporated or deposited on the front cavity surface and the rear cavity surface respectively; finally, the laser bar is divided or cleaved to complete the production of a single laser. The method of the invention can effectively reduce the light absorption at the cavity surface, reduce the optical power density at the cavity surface, and effectively increase the maximum output power of the laser.

Description

technical field [0001] The invention relates to semiconductor laser technology, in particular to a manufacturing method of a semiconductor laser. Background technique [0002] Semiconductor lasers are widely used in the fields of optical communication, optical pumping, optical storage, and laser display due to their simple fabrication, small size, light weight, long life, and high efficiency. However, the current output power of semiconductor lasers is relatively small, which limits the application of semiconductor lasers. Therefore, the industry has been working on improving the output power of semiconductor lasers. At present, the main problems faced by high-power semiconductor lasers are severe heating under high-current injection and how to improve the optical catastrophic damage (COD) threshold of the device. [0003] Optical catastrophic damage is produced by the overflow of heat, which generally occurs on the cavity surface of semiconductor lasers. The cavity surfac...

Claims

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Application Information

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IPC IPC(8): H01S5/10
Inventor 冯美鑫张书明王辉刘建平曾畅李增成王怀兵杨辉
Owner 苏州纳睿光电有限公司
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