A method for constructing microelectronic devices through hierarchical heterostructure nanomaterials

Abstract

The invention relates to the technical field of semiconductor micro-electronic parts, and in particular relates to nanometer semiconductor materials with a multilevel heterostructure manufactured by combining an electrospinning technology with a hydrothermal synthesis technology and a method for manufacturing a micro-electronic part with stable performances by using the nanometer semiconductor materials. In the method, inorganic oxide nanofibers obtained by adopting the electrospinning technology to sinter is takend as a core. The method comprises the following steps: depositing and growing inorganic oxide nanorods on fiber surfaces sequentially by the hydrothermal reaction to obtain single-dimensional arborescent nanometer materials with the multilevel heterostructure; and assembling an FET (field-effect transistor). The FET has higher electron mobility and exceeds the vast majority of FETs in the long service life and the high stability. The maximum electron mobility of anatase titanium dioxide nanofiber / titanic schorl titanium dioxide nanorod FETs with the multilevel heterostructure can be above 10cm<2> / Vs, and the performances do not attenuate hardly with the increment of thetime and the humidity.

Description

technical field [0001] The invention belongs to the technical field of nano-semiconductor microelectronic devices, and specifically relates to a method for preparing a nano-semiconductor material with a multi-level heterogeneous structure by using an electrospinning technology combined with a hydrothermal synthesis technology, and is used to construct a high-performance and stable microelectronic device. Background technique [0002] Due to the advantages of small size, light weight, high reliability, fast working speed, and high read and write density, microelectronic devices have a huge impact on the development of the information age. Field-effect transistor is the simplest and most important structural unit in current semiconductor electronic devices, and it is the most deeply researched device at present. According to the type of material, it can be divided into non-field effect transistors and organic field effect transistors. Although organic field effect transistors ...

AI Technical Summary

Problems solved by technology

According to the type of material, it can be divided into non-field effect transistors and organic field effect transistors. Although organic field effect transistors have great advantages over non-field effect transistors in terms of price, flexibility, device fabrication and operation, they have lower electron mobility. (Generally within 0.01cm 2 / Vs or less) has become a bottleneck restricting its real application and development

In addition, the existing organic and non-field effect transistors cannot meet the needs of the current electronics industry in terms of life and stability, and further improvement is needed.

Moreover, the previous methods sometimes require complicated processing, which will increase the degree of craftsmanship and increase the price, which is not conducive to popularization

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