Method for removing silicon solar cell diffusion death layer
A technology of silicon solar cells and diffusion dead layer, applied in the field of solar cells, can solve the problems of difficult control of square resistance, difficult control of corrosion uniformity, difficult to control etching thickness, etc., so as to improve the photoelectric efficiency and accurately control the etching thickness of silicon , the effect of low cost
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[0020] Taking the preparation of an existing conventional battery as an example, the steps are as follows:
[0021] (1) P-type silicon wafer to remove damaged layer, texture,
[0022] (2) Front-diffused phosphorus to prepare emitter junction;
[0023] (3) Soak the diffused silicon wafer in 5% HF for 5 minutes to remove the phosphosilicate glass on the surface;
[0024] (4) Put the cleaned silicon wafer as an anode into an anodizing device for anodizing, at room temperature, with a voltage of 50V, anodizing time of 1min, and the thickness of the silicon dioxide produced is 20 nm;
[0025] (5) Soak the silicon wafer in HF acid to remove the above-mentioned silicon dioxide; according to the ratio of 0.44nm of silicon is consumed for every 1nm of silicon oxide formed, the silicon removal thickness on the surface is 8.8nm;
[0026] (6) Remove peripheral knots and clean;
[0027] (7) Deposition of anti-reflection film;
[0028] (8) Front and back electrode printing;
[0029] (9...
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