Integrated circuit structure and method to stop contact metal from extruding into gate

Abstract

The invention provides an integrated circuit structure and method to methods and structures used to prevent protrusion of contact metal (such as W) horizontally into gate stacks of neighboring devices to affect the work functions of these neighboring devices. A metal gate below a contact plug is defined by a work function layer with good sidewall coverage function and used as a gasket layer of the metal gate, wherein the contact plug is the neighboring device and in common use with (or connected to) the metal gate and the work function layer has good ladder coverage function to prevent the contact metal extruding into the gate stacks of the neighboring devices. Only modification to the mask layout for the photomask(s) used for removing dummy polysilicon is involved. No additional lithographical operation or mask is needed. Therefore, no modification to the manufacturing processes or additional substrate processing steps (or operations) is involved or required. The benefits of using the methods and structures described above may include increased device yield and performance.

Description

technical field [0001] The invention relates to a metal protrusion, in particular to a contact hole metal protruding into a replacement grid. Background technique [0002] The integrated circuit (IC) industry has experienced rapid growth. Technological advances in integrated circuit (IC) materials and design have resulted in each IC generation having smaller and more complex circuits than the previous generation. However, these developments increase the complexity of integrated circuit processes and manufacturing methods, and in order to realize these technological developments, simpler integrated circuit processes and manufacturing methods need to be developed. [0003] During the development of integrated circuits, when the geometric size (meaning the smallest component (or line width) that can be manufactured by a process) shrinks, the functional density (functional density) (meaning the number of interconnections per chip area) usually increases. number of components)....

AI Technical Summary

Problems solved by technology

[0004] However, when it comes to integrating a high-k gate dielectric / metal gate with a CMOS process, many issues arise

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