Wafer and manufacturing method thereof, and electronic device

A manufacturing method and wafer technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as wafer particle pollution, restriction of wafer performance and yield, wafer fragmentation, etc., to improve performance and yield rate effect

Active Publication Date: 2019-03-05
ZING SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the process of silicon wafer preparation, it is usually necessary to mark the direction of the silicon crystal. Although there are various marking methods, there are various problems. Wafers are prone to chipping, or particle contamination of the wafer during marking preparation, etc. These issues seriously restrict the performance and yield of the wafer

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  • Wafer and manufacturing method thereof, and electronic device
  • Wafer and manufacturing method thereof, and electronic device
  • Wafer and manufacturing method thereof, and electronic device

Examples

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Effect test

Embodiment 1

[0047] In order to solve the aforementioned technical problems and improve the performance of the device, an embodiment of the present invention provides a method for manufacturing a semiconductor device, such as figure 2 Said, said method mainly comprises:

[0048] Step S1: providing a silicon ingot;

[0049] Step S2: forming a linear film mark for marking the crystal direction of the silicon ingot on the side of the silicon ingot;

[0050] Step S3: slicing the silicon ingot to form a silicon wafer;

[0051] Step S4: Forming a laser mark for marking the crystal direction of the silicon ingot on any one of the upper and lower bottom surfaces of the silicon wafer with the linear film layer mark as a reference;

[0052] Step S5: removing the linear film layer mark.

[0053] According to the wafer manufacturing method of the present invention, in order to mark the crystal orientation of the wafer, a removable linear film layer mark is first formed, and a laser mark is formed ...

Embodiment 2

[0100] The present invention also provides a wafer, which is prepared by the method described in the first embodiment.

[0101] Wherein, a laser mark is formed on the wafer instead of a wafer notch or a wafer face-taking mark.

[0102] Wherein, the wafer is silicon polycrystalline or silicon single crystal, and is not limited to a certain one.

[0103] Wherein, the laser mark 104 is formed in a predetermined area by means of laser radiation.

[0104] Wherein, in this step, a pulsed laser with a frequency of 10 MHz or higher may be used to act on the surface of the wafer to form the laser mark 104 .

[0105] Wherein, the shape of the laser mark 104 may be a circle, a square, a polygon, etc., and is not limited to a certain one.

[0106] In this embodiment, the laser mark 104 is circular with a diameter of 0.5-5mm, but it is not limited to this range.

[0107] There is no etching step in the preparation process of the wafer and the laser mark, which can avoid the chipping of ...

Embodiment 3

[0109] Another embodiment of the present invention provides an electronic device, which includes a wafer, the wafer is the wafer in the second embodiment above, or a wafer prepared according to the wafer preparation method described in the first embodiment .

[0110] The electronic device can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP, etc. It is an intermediate product with the above-mentioned semiconductor, for example: a mobile phone motherboard with the integrated circuit, etc.

[0111] in, image 3 An example of a mobile phone handset is shown. The mobile phone handset 300 is provided with a display portion 302 included in a housing 301, operation buttons 303, an external connection port 304, a speaker 305, a microphone 306, and the like.

[0112] Wherein said mobile phone handset comprises the aforementioned wafer,

...

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Abstract

The invention provides a wafer and a manufacturing method thereof and an electronic device. The method comprises the steps of providing a silicon ingot; forming a linear film layer marker for markinga crystal orientation of the silicon ingot on a side surface of the silicon ingot; slicing the silicon ingot to form a silicon wafer; forming a laser marker for marking the crystal orientation of thesilicon ingot on any of upper and lower bottom surfaces of the silicon wafer with the linear film layer marker as a reference; and removing the linear film layer marker. With the method, not only themarker can be accurately formed on the surface of the wafer, but also the cracking of the wafer during the marker manufacturing process or after manufacturing of the marker and the problem of contamination of the wafer during the marker preparation process can be avoided since no etching step exists in the whole preparation process, and thus the performance and yield of the wafer are further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a wafer, a manufacturing method thereof, and an electronic device. Background technique [0002] With the continuous development of integrated circuit technology, more devices will be integrated on the chip, and the chip will adopt faster speed. Driven by these requirements, the geometric size of devices will continue to shrink, and new materials, new technologies and new manufacturing processes will be continuously used in the chip manufacturing process. Among them, silicon is a semiconductor material with excellent performance, which is widely used in infrared spectrum frequency optical components, infrared and r-ray detectors, integrated circuits, solar cells, etc. [0003] In the process of silicon wafer preparation, it is usually necessary to mark the direction of the silicon crystal. Although there are various marking methods, there are various problems. Wafers are...

Claims

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Application Information

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IPC IPC(8): H01L21/67
CPCH01L21/67282
Inventor 三重野文健
Owner ZING SEMICON CORP
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