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Process for passivating bidirectional trigger diode scrapped glass

A two-way triggering and glass passivation technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of high production cost, complex operation, low efficiency, etc., to achieve enhanced stress resistance, simple process steps, The effect of reducing electrical losses

Inactive Publication Date: 2011-07-20
CHANGZHOUSR SEA ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, the process of manufacturing bidirectional trigger devices in the semiconductor industry is mostly to cut the diffused silicon wafer to form hundreds of chips. To achieve the effect of passivation protection, the operation is complicated, the time is long, the efficiency is low, and the production cost is high

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The bidirectional trigger diode knife scraping glass passivation process includes the following process steps:

[0020] (1) Carry out the photolithography process of double-sided gluing, pre-baking, exposure, development and hardening of the silicon wafer diffused out of the NPN type according to the size specifications of the required chip, and make a photolithographic pattern;

[0021] (2), put the silicon chip obtained in the above steps into the mixed acid etching solution to corrode, corrode the NPN type mesa grooves of each chip, keep the connection between the chips without continuous separation, and then carry out glue removal and cleaning;

[0022] (3), prepare the solvent for glass paste: the feeding intake of ethyl cellulose and acetone diluent is: 1g: 5ml, put the prepared mixed solution in a beaker, heat and stir to dissolve, and obtain the required solvent for glass paste ;

[0023] (4), prepare glass paste: the glass paste prepared in step (3) is poured ...

Embodiment 2

[0031] The bidirectional trigger diode knife scraping glass passivation process is characterized in that it includes the following process steps:

[0032] (1) Carry out the photolithography process of double-sided gluing, pre-baking, exposure, development and hardening of the silicon wafer diffused out of the NPN type according to the size specifications of the required chip, and make a photolithographic pattern;

[0033] (2), put the silicon chip obtained in the above steps into the mixed acid etching solution to corrode, corrode the NPN type mesa grooves of each chip, keep the connection between the chips without continuous separation, and then carry out glue removal and cleaning;

[0034] (3) Solvent for preparing glass paste: the feeding amount of ethyl cellulose and acetone diluent is: 1g: 20ml, put the prepared mixed solution in a beaker and heat and stir to dissolve to obtain the required solvent for glass paste ;

[0035] (4), prepare glass paste: the glass paste prep...

Embodiment 3

[0043] The bidirectional trigger diode knife scraping glass passivation process is characterized in that it includes the following process steps:

[0044] (1) Carry out the photolithography process of double-sided gluing, pre-baking, exposure, development and hardening of the silicon wafer diffused out of the NPN type according to the size specifications of the required chip, and make a photolithographic pattern;

[0045] (2), put the silicon chip obtained in the above steps into the mixed acid etching solution to corrode, corrode the NPN type mesa grooves of each chip, keep the connection between the chips without continuous separation, and then carry out glue removal and cleaning;

[0046] (3) Solvent for preparing glass paste: The ethyl cellulose and acetone diluent are charged as follows: 1g: 15ml, the prepared mixed solution is placed in a beaker and heated and stirred to dissolve to obtain the required solvent for glass paste ;

[0047] (4), prepare glass paste: the gla...

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PUM

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Abstract

The invention discloses a process for passivating bidirectional trigger diode scrapped glass, which comprises the following processing steps of: forming a photoetching pattern on a silicon slice diffusing to form the NPN type; placing the silicon slice into mixed acid corrosive liquid to carry out corrosion so as to form NPN-type table grooves of chips; preparing a solvent for glass pulp; preparing the glass pulp; coating the stirred glass pulp on the surface of the silicon slice and in the grooves; placing the silicon slice into a quartz boat; placing the quartz boat into a quartz tube for being presintered and burnt; after repeatedly operating the steps, carrying out scribing on the prepared alloyed silicon slice to prepare required chips of a bidirectional trigger device. The process has simple steps. Due to the adoption of the process, the passivation effect of the bidirectional trigger diode scrapped glass is good; the efficiency is greatly improved; and compared with cost in the prior art, the cost is greatly reduced.

Description

technical field [0001] The invention relates to the field of diode technology, in particular to a two-way trigger diode knife scraping glass passivation technology. Background technique [0002] At present, the process of manufacturing bidirectional trigger devices in the semiconductor industry is mostly to cut the diffused silicon wafer to form hundreds of chips. To achieve the effect of passivation protection, the operation is complicated, the time is long, the efficiency is low, and the production cost is high. Contents of the invention [0003] The object of the present invention is to provide a bidirectional trigger diode knife scraping glass passivation process that can reduce cost, short working time, and simple operation process in order to solve the above problems. [0004] To achieve the above object, the present invention adopts the following technical solutions: [0005] The bidirectional trigger diode knife scraping glass passivation process is characterized...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329H01L21/56
Inventor 朱元波
Owner CHANGZHOUSR SEA ELECTRONICS
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