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Preparation method of ZnO, CuO and ZnS quantum dot film

A technology of quantum dots and colloidal quantum dots, applied in chemical instruments and methods, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as low yield and complex process, achieve controllable film thickness and simple process , Optimize the effect of separation and compounding

Inactive Publication Date: 2011-06-08
ZHEJIANG UNIV
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Problems solved by technology

What's more worth mentioning is that compared with organic light-emitting molecules, its relatively stable photochemical properties have brought many opportunities for its practical application. A group of explorers led by scientist Bawendi have made some fruitful attempts in this field, but in The process introduced in the step of preparing quantum dots is complicated, the yield is not high, and most of them involve toxic heavy metal ions, and there is still a certain distance from the real industrialization
At present, the preparation of inorganic quantum dots by the low-temperature water bath method has gradually matured, and many of them have been applied to bioluminescence labeling, but there are few reports on the application of thin-film devices, and the more successful ones are mainly concentrated on ZnO quantum dots. Jin and Sun et al. have carried out some work on the application of its ultraviolet detection and field effect transistors, and more in-depth application attempts have yet to be carried out

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  • Preparation method of ZnO, CuO and ZnS quantum dot film
  • Preparation method of ZnO, CuO and ZnS quantum dot film
  • Preparation method of ZnO, CuO and ZnS quantum dot film

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Embodiment

[0030] 1) 0.7925g (purity 99.99%) Zn(CH 3 COO) 2 powder and 0.0327g (purity 99.99%) Cu(CH 3 COO) 2 Dissolve the powder in 40 mL of methanol solution, stir well, add 250 μL of deionized water, and reflux in a water bath at 60°C for 30 minutes to obtain a precursor solution;

[0031] 2) Add 20 mL of 0.167 mol / L KOH methanol solution dropwise to the precursor solution in step 1), react in a water bath at 60°C for 2.5 hours, cool with ice water, and wash with methanol for 3 times to obtain Cu ion-modified ZnO quantum dots Precipitation, its phase was characterized by XRD (see figure 1 ), PL characterizes its luminescent properties (see figure 2 ), high-resolution transmission electron microscopy to characterize its morphology and size (see image 3 a);

[0032] 3) 0.2724g (purity 99.99%) Cu(CH 3 COO) 2 The powder was dissolved in 60 mL of methanol solution, 100 μL of glacial acetic acid was added, and refluxed in a water bath at 80 ° C for 120 minutes to obtain Cu(CH 3 C...

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Abstract

The invention relates to a preparation method of a ZnO, CuO and ZnS quantum dot film. The preparation method comprises the following steps: preparing Cu ion modified ZnO quantum dot precipitate, CuO quantum dot precipitate and ZnS quantum dot precipitate; adding trichloromethane in the prepared quantum dot precipitates respectively to fully dissolve, then adding n-octylamine dispersant to obtain Cu ion modified ZnO colloidal quantum dot solution, CuO colloidal quantum dot solution and ZnS colloidal quantum dot solution; diluting the three kinds of colloidal quantum dot solutions with the sameamount of trichloromethane, filtering with a polytetrafluoroethylene (PTFE) filter, coating one or more of the colloidal quantum dot solutions on an indium-tin oxide (ITO) substrate through the spin-coating method, prebaking, and annealing in the air to obtain the quantum dot single-layer or multi-layer film. The preparation process of the invention is simple; the coated quantum dot film is compact and smooth and has good adhesion performance and controllable film thickness; and the quantum dot multi-layer structure is easy to realize and the quantum dot film is suitable for the multi-layer quantum dot film element.

Description

technical field [0001] The invention relates to a preparation method of a quantum dot thin film, in particular to a preparation method of a ZnO, CuO and ZnS quantum dot thin film. Background technique [0002] Quantum dots are subject to size constraints and have adjustable luminous properties, making them extremely advantageous in both visible light sources and large-area flat panel displays. Compared with the preparation of quantum dots by the traditional vapor phase epitaxy method, the synthesis of colloidal quantum dots is controllable and has high monodispersity. It is easily compatible with inkjet printing, stamping and spin coating processes to prepare quantum dot single / multilayer films. A new type of luminescent system with improved light gain. At the same time, inorganic quantum dots have good compatibility with various light-emitting materials, so their advantages can be reflected in both all-inorganic quantum dot devices and organic-inorganic hybrid quantum devi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/58C09K11/56
CPCY02P70/50
Inventor 朱丽萍胡亮何海平叶志镇
Owner ZHEJIANG UNIV
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