Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same

Abstract

The invention provides transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same. A heterostructure semiconductor transistor can include a III-N-type semiconductor heterostructure including a barrier layer overlying an active layer and a hybrid electrode region including a hybrid drain electrode region. Further, a heterostructure semiconductor rectifier can include a III-N-type semiconductor heterostructure and a hybrid electrode region including a hybrid cathode electrode region. Furthermore, the hybrid electrode region of the transistor and rectifier can include permanently trapped charge located under a Schottky contact of the hybrid electrode region.

Description

[0001] This application claims U.S. Provisional Patent Application No. 61 / 213,895, entitled "AlGaN / GaN DUAL-CHANNEL LATERAL FIELD-EFFECT RECTIFIER WITH PUNCH-THROUGH BREAKDOWN IMMUNITY AND LOW ON-RESISTANCE," filed July 27, 2009 and filed at Priority to U.S. Provisional Patent Application No. 61 / 348,976, entitled "AlGaN / GaN DUAL-CHANNEL LATERAL FIELD-EFFECT RECTIFIER WITH PUNCH-THROUGH BREAKDOWN IMMUNITY AND LOW ON-RESISTANCE," filed May 27, 2010. The entire content of the above application is hereby incorporated by reference in its entirety. technical field [0002] The present invention generally relates to III-nitride power devices and methods of fabrication thereof, including but not limited to III-nitride semiconductor transistors and rectifiers with mixed electrodes and related fabrication methods. Background technique [0003] III-Nitride-type (“III-N”) compound semiconductor materials, including GaN (gallium nitride), have wide bandgap, high breakdown voltage, and A...

AI Technical Summary

Problems solved by technology

[0005] Traditional AlGaN / GaN high electron mobility transistors (HEMTs) and lateral field effect rectifiers (L-FERs) cannot achieve high breakdown voltage (or anti-channel punch-through capability) and low on-resistance at the same time, the reason is that increasing the When the channel punch-through resistance of similar devices is increased (such as by increasing the Schottky contact length (greater than 1 micron)), the on-resistance will increase accordingly

In addition, traditional enhancement mode / depletion mode HEMTs will fail under high currents caused by the following reasons, including: (1) The drain of the HEMT is subjected to negative bias voltage, such as battery reverse connection in electric vehicle applications, and Class- Output filter circuit feedback in S switch-mode amplifier applications; (2) The gate of the HEMT is subjected to high DC or pulsed positive voltage

Furthermore, traditional rectifiers, including Schottky barrier diodes (SBDs) and L-FERs, etc., can fail under the increase of their anode forward bias voltage, because the increase of anode forward bias voltage will cause the conduction state current increases, causing the rectifier to fail

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