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Film for manufacturing semiconductor device and method of manufacturing the same

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, lamination devices, manufacturing tools, etc., can solve problems such as film floating and peeling, and achieve the effect of preventing interface peeling and improving yield

Inactive Publication Date: 2010-06-23
NITTO DENKO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, there is a problem in that residual stress remains in the produced dicing die-bonding film, and after the above-mentioned transportation in a low-temperature state or long-term storage, secondary stress occurs at the interface between the adhesive layer and the adhesive layer. stripping
In addition, there is a problem of film floating caused by shrinkage of the dicing / die-bonding film

Method used

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  • Film for manufacturing semiconductor device and method of manufacturing the same
  • Film for manufacturing semiconductor device and method of manufacturing the same
  • Film for manufacturing semiconductor device and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0099]

[0100] In a reaction vessel equipped with a cooling pipe, a nitrogen introduction pipe, a thermometer and a stirring device, 88.8 parts of 2-ethylhexyl acrylate (hereinafter referred to as "2EHA"), 2-hydroxyethyl acrylate (hereinafter referred to as " HEA".) 11.2 parts, 0.2 parts of benzoyl peroxide, and 65 parts of toluene were polymerized at 61° C. for 6 hours in a nitrogen stream to obtain an acrylic polymer A with a weight average molecular weight of 850,000. The molar ratio of 2EHA to HEA is 100mol to 20mol. The measurement of the weight average molecular weight will be described later.

[0101] Add 12 parts of 2-methacryloyloxyethyl isocyanate (hereinafter referred to as "MOI") to this acrylic polymer A (80 mol% relative to HEA), and perform addition reaction treatment at 50°C in an air stream. After 48 hours, an acrylic polymer A' was obtained.

[0102] Next, 8 parts of an isocyanate-based crosslinking agent (trade name "Coronate L", manufactured by Nippon ...

Embodiment 2

[0127]

[0128] As the dicing film in this example, the same dicing film as in Example 1 was used.

[0129]

[0130] With respect to 100 parts of an acrylate-based polymer mainly composed of ethyl acrylate-methyl methacrylate (manufactured by Negami Industry Co., Ltd., trade name: Parachrom W-197CM, Tg: 18°C), an isocyanate-based crosslinking agent (manufactured by Nippon Polyurethane Co., Ltd., trade name Coronate HX) 2 parts, epoxy resin (manufactured by JER Co., Ltd., Epikote 1001) 35 parts, phenolic resin (manufactured by Mitsui Chemicals Co., Ltd., trade name: Milex XLC-4L) 37 parts, 30 parts of spherical silica (manufactured by Admatechs Co., Ltd., trade name: SO-25R, average particle diameter: 0.5 μm) as an inorganic filler were dissolved in methyl ethyl ketone to prepare a concentration of 21.4% by weight .

[0131] A solution of the adhesive composition is applied on the release-treated film (substrate separator) with a sprayer to form a coating layer, and hot ai...

reference example 1

[0150]

[0151] As the dicing film in this reference example, the same dicing film as in Example 1 was used.

[0152]

[0153] The dicing film in this reference example was carried out and produced similarly to Example 1 except having changed the addition amount of the inorganic filler to 95 parts.

[0154]

[0155] The dicing / die-bonding film in this reference example was produced in the same manner as in Example 1 above.

[0156] (Measuring method of tensile elastic modulus of adhesive layer)

[0157] From the slit film in each example and comparative example, cut out a length of 10.0 mm, a width of 2 mm, and a cross-sectional area of ​​0.1 to 0.5 mm 2 of samples. The sample was subjected to a tensile test in the MD direction at a measurement temperature of 23° C., a distance between clamps of 50 mm, and a tensile speed of 50 mm / min, and the amount of change (mm) due to elongation of the sample was measured. Thus, in the obtained S-S (Strain-Strength) curve, a tange...

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Abstract

A present invention relates to a film for manufacturing a semiconductor device in which a cover film is pasted onto a laminated film, wherein the shrinkage in the longitudinal direction and in the lateral direction in the laminated film after peeling the cover film and leaving for 24 hours at a temperature of 23+-2 DEG C. is in a range of 0 to 2% compared to the laminated film before pasting of the cover film.

Description

technical field [0001] The present invention relates to a thin film for manufacturing a semiconductor device used in the manufacture of a semiconductor device and a method for manufacturing the same. Background technique [0002] The semiconductor wafer (wafer) on which the circuit pattern was formed is diced into semiconductor chips (chips) after adjusting thickness by back grinding as needed (dicing process). Next, the semiconductor chip is fixed to an adherend such as a lead frame with an adhesive (die attach process), and then moves to a bonding process. In the die attach process, an adhesive (adhesive) is applied to a lead frame or a semiconductor chip. However, it is difficult to achieve uniformity of the adhesive layer by this method, and application of the adhesive requires special equipment or takes a long time. Therefore, there has been proposed a dicing / die-bonding film that adheres and holds a semiconductor wafer during a dicing process while also imparting an ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/68H01L21/304B28D5/00B32B7/12
CPCB32B37/12H01L21/67011B32B2038/0028B32B2307/734B32B38/0012B32B2309/027B32B2457/14Y10T428/14
Inventor 天野康弘
Owner NITTO DENKO CORP
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