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Preparation method of copper and indium alloy ink and application thereof

A copper indium alloy and ink technology, applied in the field of solar energy applications, can solve the problems of difficult nanoparticles and the like, and achieve the effects of easy dispersion, good sintering, and suitable particle size distribution

Inactive Publication Date: 2011-05-25
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because copper particles are more active and easy to oxidize, while indium particles are soft and easy to flatten, it is difficult to obtain nanoparticles with suitable particle size distribution and good dispersion by physical methods.

Method used

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  • Preparation method of copper and indium alloy ink and application thereof
  • Preparation method of copper and indium alloy ink and application thereof
  • Preparation method of copper and indium alloy ink and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) 1mmol CuCl 2 and 1mmol InCl 3 Dissolved in 20ml of ethylene glycol at 140°C, 0.1g of NaBH 4 The ethylene glycol solution of sodium borohydride obtained by dissolving in 4 ml of ethylene glycol was slowly dropped in and reacted for 30 minutes, and was washed and dried by centrifugation to obtain copper-indium alloy nanoparticles. Prepare the solvent according to ethylene glycol:methanol:ethylene glycol methyl ether=5:1:4 (volume ratio). The ink was prepared according to the amount of copper-indium alloy nanoparticles:solvent=1:4 (mass ratio) and ultrasonically dispersed for 30min. The prepared copper-indium alloy ink was coated on the substrate sheet by doctor-blade method, and dried at 80°C. The precursor film was vulcanized. The vulcanization process was as follows: firstly, the temperature was raised to 400 °C at a rate of 3 °C / min, and the organic solvent was removed by heating under the protection of an inert gas; then the temperature was raised to 550 °C at ...

Embodiment 2

[0029] (1) 2mmol CuCl 2 and 2mmol InCl 3 Dissolved in 40ml of ethylene glycol at 140°C, 0.2g of NaBH 4 The ethylene glycol solution of sodium borohydride obtained by dissolving in 8 ml of ethylene glycol was slowly dropped in and reacted for 30 minutes, and was washed and dried by centrifugation to obtain copper-indium alloy nanoparticles. Prepare the solvent according to ethylene glycol:methanol:ethylene glycol methyl ether=2:1:3 (volume ratio). The ink was prepared according to the amount of copper-indium alloy nanoparticles / solvent=1:2 (mass ratio) and ultrasonically dispersed for 30 minutes. The prepared ink was coated on the substrate sheet by doctor-blade method, and dried at 80°C. The precursor film was vulcanized. The vulcanization process was as follows: firstly, the temperature was raised to 400 °C at a rate of 3 °C / min, and the organic solvent was removed by heating under the protection of an inert gas; then the temperature was raised to 550 °C at a rate of 4 °C / ...

Embodiment 3

[0031] (1) 1mmol CuCl 2 and 1mmol InCl 3 Dissolved in 40ml of ethylene glycol at 100°C, dissolved 0.5g of disodium hypophosphite in 5ml of ethylene glycol to obtain the ethylene glycol solution of disodium hypophosphite slowly dripped and reacted for 40min, and obtained by centrifugal washing and drying Copper-indium alloy nanoparticles. Prepare the solvent according to ethylene glycol:methanol:ethylene glycol methyl ether=7:1:6 (volume ratio). The ink was prepared according to the amount of copper-indium alloy nanoparticles:solvent=1:5 (mass ratio) and ultrasonically dispersed for 30min. The prepared ink was coated on the substrate sheet by doctor-blade method, and dried at 100°C. The precursor film was vulcanized. The vulcanization process was as follows: firstly, the temperature was raised to 400°C at a heating rate of 3°C / min, and the organic solvent was removed by heating under the protection of an inert gas; Carry out vulcanization under sulfur atmosphere for 30min. ...

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Abstract

The invention discloses a preparation method of a copper and indium alloy ink, comprising the following steps: (1) dissolving copper chloride and indium chloride in ethylene glycol at 80-200 DEG C, then slowing dropwise adding ethylene glycol solution of sodium borohydride for reaction; carrying out centrifuge, washing and drying to obtain copper and indium alloy nanoparticles; (2) preparing solution according to volume ratio: ethylene glycol: methanol: ethylene glycol methyl ether=2-8: 1:2-6; (2) dispersing the copper and indium alloy nanoparticles obtained in step (1) according to mass ratio: copper and indium alloy nanoparticles : solvent=1 : 2-8 and evenly dispersing the mixture by ultrasonic waves to obtain the copper indium alloy ink. The invention also discloses an application method of the copper and indium alloy ink in preparing sulphur indium copper film or selenium indium copper film. In the invention, a low-cost chemical method is adopted to synthesize copper and indium alloy nanoparticles, the prepared film features compact and smooth surface and large film crystallite dimension after sintering and no obvious film miscellaneous phase.

Description

technical field [0001] The invention relates to a preparation method of a copper-indium alloy ink and a method for preparing a sulfur-indium-copper film or a selenium-indium-copper film by using the copper-indium alloy ink, belonging to the field of solar energy applications. Background technique [0002] Due to the advantages of low cost and low toxicity of I-III-IV compound semiconductor thin films (mainly sulfur-indium-copper thin films and selenium-indium-copper thin films), they have attracted widespread attention as a new generation of thin-film battery materials. Existing methods for preparing I-III-IV compound semiconductor thin films mainly include: Spray Prolysis, Chemical Vapor Deposition, Molecular Beam Epitaxy, Reactive Sputtering ), vacuum evaporation (single source, dual source, triple source), metal organic chemical vapor deposition (MOCVD), electrodeposition (Elector Deposition), chemical bath method (Chemical Bath Deposition), etc. Some of the above method...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F9/24H01L31/18
CPCY02P70/50
Inventor 杨德仁陈官璧汪雷
Owner ZHEJIANG UNIV
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