Solar-grade polysilicon purifying device and solar-grade polysilicon purifying method

A technology of solar energy level and purification method, which is applied to the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of the by-product slag phase that cannot be reused, the amount of slag is large, and waste the environment, etc., and achieve considerable market prospects , low cost and short investment period

Inactive Publication Date: 2010-04-28
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

U.S. Patent US 6,368,403 B1 (Frederick Schmid, Chandra P.Khattak, DavidB.Joyce.Method and apparatus for purifying silicon, Patent Number US6368403B1, Apr.9, 2002) is purified by blowing slagging and other processes, mainly for B And the removal of C and O, and the removal effect is very good, but due to the large amount of slag required by this process, the cost is increased and the by-product slag phase cannot be reused, causing great waste and environmental pollution

Method used

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  • Solar-grade polysilicon purifying device and solar-grade polysilicon purifying method

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Experimental program
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Effect test

Embodiment 1

[0046] Put 216Kg of industrial silicon and 24Kg of copper into the quartz crucible, turn on the heating power supply, energize the induction heating coil, the power is 200kW, the graphite heating sleeve will generate heat by induction, and heat the silicon and copper in the quartz crucible , the copper in the crucible first melts at 1084°C, and the silicon also begins to melt slowly as the temperature rises. When the silicon in the quartz crucible is completely melted to form a silicon-copper alloy melt, a thermocouple temperature measuring device is used to measure the temperature of each point in the vertical direction inside the quartz crucible, and the induction heating power controller is adjusted to make the alloy melt in the quartz crucible Maintain a stable temperature gradient with an upper limit of 1600°C and a lower limit of 1414°C. Start the directional lifting device to drive the quartz crucible containing the alloy melt and the graphite chassis to pull down toget...

Embodiment 2

[0048] Technological process is with embodiment 1. Put 168kg of industrial silicon and 72kg of copper into a quartz crucible, turn on the heating power supply, and energize the induction heating coil with a power of 120kW. After all the silicon and copper in the crucible are melted, adjust the induction heating power controller to make the quartz crucible The alloy melt maintains a stable temperature gradient with an upper temperature limit of 1450 °C and a lower temperature limit of 1300 °C. Start the directional lifting device, and the descending speed is 30mm / h. After the orientation process is completed, the alloy silicon ingot is taken out, and the upper 50% is cut off. The remaining part is determined to be a polycrystalline silicon ingot with a purity of 99.99992%, and the crystal grain of the silicon ingot is larger than 0.5mm and is a vertically oriented columnar crystal with a resistivity of 0.5-1Ω·cm. It can be sliced ​​directly for making solar cells. Put the cut...

Embodiment 3

[0050] Technological process is with embodiment 1. Put 192kg of industrial silicon and 48kg of copper into a quartz crucible, turn on the heating power supply, and energize the induction heating coil with a power of 150kW. After all the silicon and copper in the crucible are melted, adjust the induction heating power controller to make the quartz crucible The alloy melt maintains a stable temperature gradient with an upper temperature limit of 1500 °C and a lower temperature limit of 1350 °C. Start the directional lifting device, and the descending speed is 5mm / h. After the orientation process is completed, the alloy silicon ingot is taken out, and the upper 30% is cut off. The remaining part is determined to be a polycrystalline silicon ingot with a purity of 99.999986%, and the crystal grains of the silicon ingot are larger than 5mm and are vertically oriented columnar crystals, and the resistivity is 4.8-5Ω·cm, which can be directly sliced ​​and used to make solar cells. ...

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Abstract

The invention relates to a method for purifying polysilicon, and provides a solar-grade polysilicon purifying device and a solar-grade polysilicon purifying method. The purifying device is provided with a body insulating layer, an induction heating coil, a graphite heating sleeve, a graphite fixing disk, a lower insulating layer, a directional lifting device, a circulating water inlet / outlet, a graphite chassis, a crucible, an SiN coating and a thermocouple temperature measuring device. The purifying method comprises the following steps: placing the polysilicon and copper material into the crucible; melting the copper and the polysilicon to form a silicon-copper alloy fusant by switching on a power supply; measuring the temperatures at each point in the crucible along a vertical direction; adjusting an induction heating power controller so as to keep the alloy fusant in the crucible at a temperature gradient, namely the temperature is from high to low from the middle part to the bottom of the crucible; starting the directional lifting device so as to drive the crucible and the graphite chassis to be pulled down and generate directional solidification; cutting off the power supply after the alloy fusant is solidified; taking the silicon ingot of the alloy out after the solidified body is cooled and cutting the upper part of the silicon ingot; and obtaining the solar-grade polysilicon which is the rest part of the silicon ingot.

Description

technical field [0001] The invention relates to a method for purifying polysilicon, in particular to a device and a method for purifying solar grade polysilicon by using Si-Cu alloy through directional solidification. Background technique [0002] Polycrystalline silicon is the raw material for preparing monocrystalline silicon and solar cells, and is the cornerstone of the global electronics industry and photovoltaic industry. Solar cells prepared by using crystalline silicon have stable performance and long service life, and are the main materials for preparing solar cells. Application results show that solar cells with a photoelectric conversion efficiency of 15% can generate 100-200 kWh of electricity per square meter per year on average (Peter Woditscha, Wolfgang Kochb, Solar grade silicon feedstock supply for PV Industry. Solar Energy Materials & Solar Cells. 2002, 72: 11). Therefore, solar energy will become a sunrise industry to solve energy crisis and environmenta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/037C30B29/06
Inventor 罗学涛郑淞生李锦堂蔡靖陈文辉龚惟阳沈晓杰陈朝
Owner XIAMEN UNIV
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