Copper, copper/molybdenum, or copper/molybdenum alloy electrode etching solution for use in liquid crystal display system

Abstract

The invention relates to a copper, copper / molybdenum, or copper / molybdenum alloy electrode etching solution, comprising: based on the total weight of the etching solution, 12-35 wt% of hydrogen peroxide, 0.5-5 wt% of sulfate, 0.5-5 wt% of phosphate, 0.0001-0.5 wt% of fluorine ion, 0.1-5 wt% of first water-soluble cyclic amine, 0.1-5 wt% of chelating agent, 0.1-5 wt% of second water-soluble cyclicamine, 0.1-5 wt% of diol, and deionized water, the total weight of the etching solution being 100 wt%. The invention relates to the copper, copper / molybdenum, or copper / molybdenum alloy electrode layer etching solution for use in the process of etching gate electrode, source electrode, or collecting electrode of the thin film transistor (TFT) in the liquid crystal display device or etching metallic wire.

Description

technical field [0001] The present invention relates to an etching solution for a copper (Cu) layer, a copper / molybdenum (Cu / Mo) layer, or a copper / molybdenum alloy (Cu / MoX) layer. Background technique [0002] In a semiconductor device, in order to form a metal line on a substrate, a process of forming a metal layer by sputtering, a process of forming a photoresist layer with a predetermined pattern on the metal layer, and using the photoresist as a contact window are generally performed. A contact mask is used to implement the etch process of etching. In particular, the etching process is performed by dry etching using such as plasma or wet etching using an etching solution. In the case of dry etching, since a high vacuum and the like are required, the etching conditions are strict and costly. Therefore, wet etching is more advantageous than dry etching when an appropriate etching solution is present. [0003] At the same time, in thin film transistor liquid crystal dis...

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Problems solved by technology

In this case, it can easily control the etch rate, consistently obtain the desired taper, obtain excellent flatness, make the critical dimension loss (CD loss) small, and cause no residue, so it can be used in manufacturing applications. Liquid crystal display device with copper / molybdenum layer, but its disadvantage is that the aging fluctuation according to the change of metal ion concentration is drastic, specifically, the stability of the etching solution due to the increase of the rapid decomposition reaction of hydrogen peroxide due to the large amount of copper ions reduce

[0009] Specifically, according to the research of the present inventors, in the case of an etching solution using hydrogen peroxide as an oxidizing agent of a metal (such as copper, molybdenum, etc.), when the etching process is performed, the concentration of metal ions in the etching solution increases, And metal ions (such as copper) act as catalysts for decomposing hydrogen peroxide, which is an oxidizing agent, causing aging changes in the entire etching process

[0010] First, as can be appreciated from severe cases, the rapid decomposition reaction of hydrogen peroxide can lead to aging variations in the etching process and rapid rise in liquid temperature, fumes, explosions and damage to piping systems due to gas volume expansion

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