Integrated circuit resisting NMOS element total dose radiation

Abstract

The invention discloses an integrated circuit resisting NMOS total dose radiation, belonging to the technical field of electronics. The integrated circuit resisting NMOS total dose radiation comprisesan NMOS element and can also comprises a PMOS element, wherein the elements are insulated by a groove on a substrate. The integrated circuit resisting NMOS total dose radiation is characterized in that an insulation material exists between a groove filling material and a substrate material in the groove adjacent to NMOS element and generates fixed negative charges under total dose radiation. Theinsulation material is selected from silicon nitride, titanium nitride and tantalum nitride or a mixture thereof. The thickness of the insulation material ranges from 10 nm to 80 nm. The invention canbe applied to spaceflight, military, nuclear power, high energy physics and other industries relevant to total dose radiation.

Description

technical field [0001] The invention relates to an integrated circuit, in particular to an integrated circuit capable of resisting total dose irradiation of NMOS devices, and belongs to the field of electronic technology. Background technique [0002] Integrated circuit technology is being more and more widely used in industries related to total dose radiation, such as aerospace, military, nuclear power and high-energy physics. Moreover, with the continuous improvement of the integration level of integrated circuits, the size of semiconductor devices is decreasing day by day. Shallow trench isolation technology is becoming the mainstream technology for electrical isolation between devices in integrated circuits due to its excellent device isolation performance. However, due to the damage of the silicon dioxide oxide layer in the device by the total dose of irradiated particles, a large amount of fixed positive charges will be generated in the oxide layer of the shallow trenc...

AI Technical Summary

Problems solved by technology

Before the device supervisor is turned on, the supervisor is in the off state, but at this time the parasitic tube has been turned on, resulting in a large off-state leakage current

This off-state leakage current will greatly increase the power consumption of the integrated circuit, and have a relatively large negative impact on the reliability of the integrated circuit, which has become a total dose radiation reliability problem that needs to be solved urgently at this stage.

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