Method for preparing hydrogenated silicon film by utilizing magnetron sputtering
A magnetron sputtering coating and magnetron sputtering technology, applied in the direction of sputtering coating, ion implantation coating, metal material coating process, etc., can solve aggregation, Si-Si bond breaking, movement and density increase, etc. Problems, to achieve the effect of smooth surface, good compactness, and increase crystallization rate
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Embodiment 1
[0030] Evacuate the air pressure of the vacuum chamber to 6×10 -3 Pa, heat the common glass sheet to 250°C; before coating, pass 16sccm of Ar into the vacuum chamber 1 in the furnace, when the pressure in the vacuum chamber reaches 6Pa and keep the pressure stable at 6Pa, open the bias voltage from 3 to -1000V The vacuum chamber and the substrate are bombarded and cleaned for 30 minutes; this can ensure a better bond between the film and the substrate.
[0031] After the substrate was cleaned, the Ar gas was turned off, and the air pressure in the vacuum chamber was pumped to 6×10 -3 Pa, while feeding Ar gas and H 2 gas to make H 2 The volume percentage of the gas is 60%. When the vacuum chamber pressure rises to 0.5Pa, adjust the negative bias to -100V, turn on the control power of the Si target, adjust the power of the Si target to 2kW, and the deposition time is 120min to obtain hydrogenated silicon. film.
Embodiment 2
[0033] Evacuate the air pressure of the vacuum chamber to 8×10 -4 Pa, heat the quartz glass sheet to 240°C; before coating, pass 24 sccm of Ar into the vacuum chamber 1 in the furnace, when the pressure in the vacuum chamber reaches 8Pa and keeps the pressure stable at 8Pa, open the bias voltage from 3 to -800V The vacuum chamber and the substrate were bombarded and cleaned for 40 min.
[0034]After the substrate was cleaned, the Ar gas was turned off, and the air pressure in the vacuum chamber was evacuated to 8×10 -4 Pa, while feeding Ar gas and H 2 gas to make H 2 The volume percentage of the gas is 20%. When the vacuum chamber pressure rises to 0.3Pa, adjust the negative bias to -100V, turn on the control power of the Si target, adjust the power of the Si target to 4kW, and the deposition time is 60min to obtain hydrogenated silicon. film.
[0035] The thin film grown on the quartz glass plate is vacuum annealed in the later stage to increase the crystallization rate o...
Embodiment 3
[0037] Evacuate the air pressure of the vacuum chamber to 5×10 -3 Pa, heat the single crystal Si(100) sheet to 200°C; before coating, pass 18 sccm of Ar into the vacuum chamber 1 in the furnace, and when the pressure in the vacuum chamber reaches 4Pa and keeps the pressure stable at 4Pa, turn on the bias 3 to -900V to bombard and clean the vacuum chamber and substrate for 20 minutes.
[0038] After the substrate was cleaned, the Ar gas was turned off, and the air pressure in the vacuum chamber was evacuated to 5×10 -3 Pa, while feeding Ar gas and H 2 gas to make H 2 The volume percentage of the gas is 40%. When the vacuum chamber pressure rises to 0.4Pa, adjust the negative bias to -100V, turn on the control power of the Si target, adjust the power of the Si target to 3kW, and the deposition time is 90min to obtain hydrogenated silicon. film.
[0039] The thin film grown on the single crystal silicon wafer is vacuum annealed in the later stage to increase the crystallizati...
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