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Organ silicon material for encapsulating power-type LED and synthetic method thereof

A technology of LED packaging and synthesis method, applied in the fields of electronic chemicals and polymer science, can solve the problems of lack of silicone resin synthesis method, affecting the service life, poor adhesion, etc., achieving excellent thermal aging ability, not easy to poison, improve permeability Effects of Light Rate and Hardness

Active Publication Date: 2011-09-07
矽时代材料科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] (3) During the use of LEDs, light and heat often cause the aging of packaging materials, which seriously affects the service life of LEDs. Therefore, packaging materials must have good heat resistance and light aging behavior
[0012] For example, the patent literature with the publication number CN10126010A discloses "a two-component silicone resin for power LED packaging and its synthesis method", but it only provides the synthesis method of polysiloxane, and there is no synthesis method of silicone resin, and Can only make elastomer silicone with high refractive index, low hardness and poor adhesion

Method used

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  • Organ silicon material for encapsulating power-type LED and synthetic method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Vinyl silicone resin synthesis method step in component A is as follows:

[0053] (1) Add 255.2 grams of trimethylchlorosilane, 38.6 grams of vinyldimethylethoxysilane, 500 grams of tetraethyl orthosilicate, 100 grams of butanol, 1000 grams of xylene and 0.5 gram of aluminum triisopropoxide, stirred evenly;

[0054] (2) Add 600 grams of distilled water dropwise when the temperature is 30°C, and the dropping time is controlled within 2 hours;

[0055] (3) After adding dropwise and reacting at 80°C for 4 hours, add 30 grams of vinyldimethylethoxysilane dropwise, add dropwise for 1 hour, and then react for 8 hours;

[0056] (4) Pour out the layers, take the resin and the solvent part and react at 80° C. for another 6 hours;

[0057] (5) After the reaction is finished, wash with water, filter, and remove unreacted matter and solvent to obtain vinyl-containing MQ silicone resin; the preparation of vinyl-terminated polysiloxane in component A is as follows:

[0058] (1) Ad...

Embodiment 2

[0064] The synthesis steps of silicone resin in component A are as follows:

[0065] (1) Add 11.7 grams of trimethylchlorosilane, 22 grams of vinyldimethylethoxysilane, 35.6 grams of methyltriethoxysilane and 38 grams of vinyltriethoxysilane into a 3000ml four-necked flask , 253.8 grams of phenyltrichlorosilane, 83.2 grams of ethyl orthosilicate, 100 grams of isopropanol, 1000 grams of xylene and 0.7 gram of aluminum triisopropoxide, stirred evenly;

[0066] (2) Add 850 grams of distilled water dropwise when the temperature is 30°C, and the dropping time is controlled within 2 hours;

[0067] (3) After the dropwise addition of 80°C for 2 hours, add 32 grams of vinyldimethylethoxysilane, 28.2 grams of methylvinyldichlorosilane, 168 grams of methylphenyldiethoxysilane, two The dropping time of 101.2 grams of phenyldichlorosilane is controlled within 2 hours;

[0068] (4) After 4 hours of reaction after the dropwise addition, 30 grams of vinyldimethylethoxysilane and 10 grams o...

Embodiment 3

[0079] The synthesis steps of siloxane in component A are as follows:

[0080] (1) Add 35.3 grams of methyl vinyl dichlorosilane, 51.6 grams of dimethyl dichlorosilane, D 4 100 grams, 100 grams of octaphenylcyclotetrasiloxane, 315 grams of methylphenyldiethoxysilane, 379.5 grams of diphenyldichlorosilane, 800 grams of xylene and 1 gram of zinc benzoate, stir well;

[0081] (2) drip 80 grams of distilled water;

[0082] (3) Slowly raise the temperature to 90-110°C for reaction, react for 3 hours, observe the viscosity change, add 15 grams of vinyldimethylethoxysilane dropwise, and react for another 6 hours;

[0083] (4) After the reaction is finished, wash with water, filter, and remove unreacted substances and solvents to obtain methylphenyl vinyl siloxane;

[0084] The synthesis steps of siloxane in component B are as follows:

[0085] (1) Add 40.3 grams of methylhydrogen dichlorosilane, 64.5 grams of dimethyl dichlorosilane, D 4 100 grams, 100 grams of octaphenylcyclotet...

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Abstract

The invention discloses an organ silicon material for encapsulating a power-type LED and a synthetic method thereof. The organ silicon material is mixed with a component A and a component B according to a mass ratio of 1:1 to 1:20, wherein the component A is a mixture of vinyl silicon polymer and a solidify catalyst, and the vinyl silicon polymer comprises vinyl silicon resin and polysiloxane with vinyl; and the component B comprises vinyl hydro silicon resin, poly hydro siloxane and an inhibitor. The organ silicon material has a higher refractive index, high transparency, excellent ultraviolet ageing resistance, good heat ageing resistance, and the like and is an ideal encapsulating material of the power type LED. The invention also discloses a synthetic method of an organ silicon material for encapsulating the power-type LED, the solidification of resin is more complete, and the light transmission and the hardness of the cross-link resin are effectively increased.

Description

Technical field: [0001] The invention relates to the technical fields of electronic chemicals and polymers, in particular to an organosilicon material for power LED packaging and a synthesis method thereof. Background technique: [0002] In recent years, LED technology and market at home and abroad have developed rapidly. Among them, the luminous efficiency of LED has increased by 100 times, and the cost has dropped by 10 times. The development prospects of backlight, automobile combination taillights and interior lighting, etc., have attracted global lighting manufacturers to join in LED light source and market development. Therefore, LED is known as a new light source in the 21st century, and is expected to become the fourth-generation light source after incandescent lamps, fluorescent lamps, and high-intensity gas discharge lamps. [0003] Semiconductor LEDs are used as lighting sources, and the luminous flux of conventional products is far from that of general-purpose l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L83/05C08L83/07C08G77/20C08G77/12C08G77/10H01L33/00
Inventor 柯松
Owner 矽时代材料科技股份有限公司
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