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Manufacturing method for surface acoustic wave transducer

A surface acoustic wave and manufacturing method technology, applied in impedance networks, electrical components and other directions, can solve the problems of difficult etching, rough graphic interface, etc., to improve adhesion and power tolerance, improve service life, and inhibit the migration of aluminum atoms Effect

Inactive Publication Date: 2009-12-09
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

[0003] However, there are many problems in the existing surface acoustic wave sensors. For example, some alloy thin films currently used in surface acoustic wave gas sensors have limitations in reactive ion etching, mainly manifested in difficult etching and etched graphic interfaces. Rough etc.

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  • Manufacturing method for surface acoustic wave transducer
  • Manufacturing method for surface acoustic wave transducer

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Embodiment Construction

[0020] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0021] The object of the present invention is to provide a new and improved method of manufacturing high power surface acoustic wave sensor transducers.

[0022] Such as figure 2 As shown, the main progress of this method is to use titanium 2, aluminum molybdenum alloy 1, titanium 2, aluminum molybdenum alloy 1 four-layer film instead of the traditional aluminum film as the transducer film material.

[0023] refer to figure 1 , and its production steps are as follows:

[0024] Step 101 : Firstly, four layers of thin films of titanium 2 , aluminum-molybdenum alloy 3 , titanium 2 and aluminum-molybdenum alloy 1 are sequentially deposited on the piezoelectric substrate 3 .

[0025] Its piezoelectric substrate 3 can choose quartz (SiO ...

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Abstract

The invention discloses a manufacturing method for a surface acoustic wave transducer, which belongs to the field of sensor production. The manufacturing method comprises the steps that: firstly, a titanium thin film, an aluminum and molybdenum alloy thin film, a titanium thin film, an aluminum and molybdenum alloy thin film are deposited on a piezoelectric substrate sequentially; secondly, photoresist is coated on the films and exposed to form graphics of the surface acoustic wave transducer, and a mixed gas of chlorine and boron trichloride etches away non-graphical areas that the photoresist does not cover; and finally, the photoresist is removed to obtain the graphics of the surface acoustic wave transducer. The four layers of films of the manufacturing method can inhibit the movement of aluminum atoms and improve the adhesive attraction of the films and the power-carrying capacity. The manufacturing method improves the performance of the aluminum film as well as the accuracy of the etching graphics of reactive ions, thereby improving the performance of the transducer and prolonging the service life of the device.

Description

technical field [0001] The invention relates to a manufacturing technology of a surface acoustic wave sensor, in particular to a manufacturing method of a surface acoustic wave transducer. Background technique [0002] Surface acoustic wave (SAW) is an acoustic wave that propagates along the surface of an elastic substrate. Since the surface acoustic wave is converted and propagated on the surface of the medium, the injection, extraction, and processing of information can be easily realized. The surface acoustic wave sensor came out in the 1970s, and it is a rising star of the sensor. The basic principle of the surface acoustic wave gas sensor is to change the velocity of the surface acoustic wave sensor through the adsorption of the sensitive film covered on the surface of the surface acoustic wave device to the side gas, thereby changing the oscillation frequency of the surface acoustic wave oscillator, so as to realize the Gas monitoring and measurement. Compared with o...

Claims

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Application Information

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IPC IPC(8): H03H3/08
Inventor 李冬梅
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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