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Method for manufacturing and integrating multichannel high-sensitive biosensor

A biosensor and integrated method technology, which is applied in the field of silicon nanowire biosensors based on SOI technology, can solve problems such as decreased detection sensitivity, and achieve the effects of reducing false detection rate, high sensitivity, and reducing defective product rate.

Inactive Publication Date: 2009-12-02
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Patent CN1585896A uses FET sensors to detect ion concentration and base sequence. Since charged ions or base sequences have Debye wavelengths in solution, if the ions and base sequences are relatively far away from the conductive channel, the detection sensitivity will be lower. also dropped sharply

Method used

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  • Method for manufacturing and integrating multichannel high-sensitive biosensor
  • Method for manufacturing and integrating multichannel high-sensitive biosensor
  • Method for manufacturing and integrating multichannel high-sensitive biosensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment I

[0048] (1) Silicon nanowire FET field effect transistors are manufactured by top-down method based on SOI silicon wafer:

[0049] 1) Silicon wafer cleaning, first boil the silicon wafer with 7:3 concentrated sulfuric acid and hydrogen peroxide at 60 degrees for 15 minutes, then take out the ultrapure water to rinse, then use 1:3:7 ammonia water and hydrogen peroxide solution to boil for 10 minutes, take out the ultrapure water and rinse ; Next, heat in 1:2:8 hydrochloric acid and hydrogen peroxide aqueous solution at 60°C for 10 minutes, take it out, rinse it with ultrapure water, and dry it with nitrogen; corrode it with 5:1 hydrofluoric acid buffer solution for 5 seconds, take it out, and use ultrapure water Rinse and dry with nitrogen gas; dry in a 100-degree oven for 10 minutes; after cleaning, remove the polluting organic matter and metal ions contained on the surface of the silicon wafer;

[0050] 2) To thin the silicon wafer, first oxidize the silicon wafer with wet oxy...

Embodiment II

[0066] (1) Silicon nanowire FET field effect transistors are manufactured by top-down method based on SOI silicon wafer:

[0067] 1) Silicon wafer cleaning, first boil the silicon wafer with 7:3 concentrated sulfuric acid and hydrogen peroxide at 60 degrees for 15 minutes, then take out the ultrapure water to rinse, then use 1:3:7 ammonia water and hydrogen peroxide solution to boil for 10 minutes, take out the ultrapure water and rinse , then heated in 1:2:8 hydrochloric acid and hydrogen peroxide aqueous solution at 60°C for 10 minutes, took it out, rinsed it with ultrapure water, dried it with nitrogen, etched it with 5:1 hydrofluoric acid buffer solution for 5 seconds, took it out, and rinsed it with ultrapure water Rinse, blow dry with nitrogen, and dry in a 100-degree oven for 10 minutes. After cleaning, the contaminated organic matter and metal ions contained on the surface of the silicon wafer are removed;

[0068] 2) Thinning of silicon wafers, first oxidize the silic...

Embodiment III

[0086] (1) Silicon nanowire FET field effect transistors are manufactured by top-down method based on SOI silicon wafer:

[0087] 1) Silicon wafer cleaning, first boil the silicon wafer with 7:3 concentrated sulfuric acid and hydrogen peroxide at 60 degrees for 15 minutes, then take out the ultrapure water to rinse, then use 1:3:7 ammonia water and hydrogen peroxide solution to boil for 10 minutes, take out the ultrapure water and rinse , then heated in 1:2:8 hydrochloric acid and hydrogen peroxide aqueous solution at 60°C for 10 minutes, took it out, rinsed it with ultrapure water, dried it with nitrogen, etched it with 5:1 hydrofluoric acid buffer solution for 5 seconds, took it out, and rinsed it with ultrapure water Rinse, blow dry with nitrogen, and dry in a 100-degree oven for 10 minutes. After cleaning, the contaminated organic matter and metal ions contained on the surface of the silicon wafer are removed;

[0088] 2) Thinning of silicon wafers, first oxidize the silic...

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Abstract

The invention provides a method for manufacturing and integrating a multichannel high-sensitive biosensor. The method comprises the following steps: firstly, based on an SOI silicon chip, adopting a top-down method to manufacture an FET field effect transistor of a silicon nanometer wire; secondly, utilizing polydimethylsiloxane (PDMS) to manufacture a plurality of microfluid channels; and finally, modifying the silicon nanometer wires in different microfluid channels to allow the silicon nanometer wire to be modified with different detecting antibodies and small molecules for detecting different target molecules. The sensor manufacture by the method can be used for simultaneously detecting relevant factors (such as DNA, RNA, protein and the like) or virus of different types of diseases and has the characteristics of high sensitivity, stability, easy integration and the like.

Description

technical field [0001] The invention relates to a method for manufacturing an integrated multi-channel high-sensitivity biosensor, in particular to a method for manufacturing a silicon nanowire biosensor based on SOI technology. Background technique [0002] At present, diabetes, cardiovascular disease, respiratory disease, liver disease, and cancer are major diseases that threaten human health. Although medicine and related disciplines continue to develop and progress, people are still making slow progress in the rapid diagnosis and treatment of these diseases; if these diseases cannot be discovered in time, it is almost difficult to treat them when they reach an advanced stage. The reason why the disease cannot be detected early is that, first, in the early stage, the relevant pathogenic characteristics are not obvious, and the number of related protein factors secreted by it is relatively small, which is not easy to detect with current detection methods; second, even if i...

Claims

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Application Information

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IPC IPC(8): G01N27/414B81C1/00H01L21/336B82B3/00B81C5/00B81C99/00
Inventor 苏瑞巩张蓓蓓李宁程国胜
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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