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Etching method of solar battery silicon chip edges and reverse diffusion layer

A solar cell and diffusion layer technology, applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve problems such as difficulty in control, battery performance degradation, and difficulty in monitoring, to reduce peripheral defects and cracks, and reduce process debris. rate, the effect of reducing leakage

Inactive Publication Date: 2009-11-25
CHINA SUNERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the development of solar cell edge etching and backside full etching technology, the problem of backside leakage is better solved, but at the same time there are many corresponding problems, such as insufficient etching or too much etching, which are difficult to control and difficult to monitor. The problem that leads to large battery leakage and a sharp drop in battery performance

Method used

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  • Etching method of solar battery silicon chip edges and reverse diffusion layer
  • Etching method of solar battery silicon chip edges and reverse diffusion layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Embodiment 1, solar cell silicon wafer periphery and back diffusion layer etch, its process steps are as follows:

[0016] 1. Deposit and deposit a barrier layer mask on the front side of the solar cell silicon wafer that has been diffused to be etched using the deposition principle; the material used for the barrier layer mask is photoresist.

[0017] 2. After depositing the barrier layer mask, put the silicon wafer into the etching solution (a mixture of hydrofluoric acid and nitric acid) to allow it to react for a sufficient time (etching above 70 degrees Celsius for more than one minute) to ensure that all the diffusion parts on the back are fully reacted , take it out and clean it with deionized water; the mass ratio of hydrofluoric acid and nitric acid in the mixed solution of hydrofluoric acid and nitric acid is between 1:10 and 10:1, and the mixed solution of hydrofluoric acid and nitric acid is dissolved in an aqueous solution with a concentration of 2% by mass ...

Embodiment 2

[0019] Embodiment 2, the application of the method of the present invention in the manufacture of solar cell silicon wafers with different surface topography on both sides or in different regions, the method is basically the same as in embodiment 1, except that the region of the deposition mask and the etching method are different:

[0020] 1. Take the solar cell silicon wafer that has been diffused to be etched, and use the deposition principle to select and make a barrier layer mask on the solar cell silicon wafer according to the required area; the material used for the barrier layer mask is silicon nitride, oxide silicon or titanium oxide.

[0021] 2. After depositing the barrier layer mask, put the silicon wafer into the etching solution (lye) to allow it to react for a sufficient time to ensure that the undeposited area becomes the desired shape, take it out and rinse; the OH of the lye - The ion molar concentration is between greater than 1% and the maximum solubility s...

Embodiment 3

[0023] Embodiment 3 is basically the same as Embodiment 2, except that the desired shape is first formed on the entire silicon wafer, and the desired shape is removed by etching the area, and another desired shape is etched.

[0024] 1. Take the solar cell silicon wafer that has been diffused to be etched, and use the deposition principle to select and make a barrier layer mask on the silicon wafer (the side that needs to protect the morphology) according to the required area; the barrier layer mask uses The material is silicon oxide.

[0025] 2. After depositing the barrier layer mask, put the silicon wafer into the etching solution to allow it to react for a sufficient time to ensure that the undeposited area becomes the desired shape, take it out and rinse;

[0026] 3. Put the silicon wafer in hydrofluoric acid solution to remove the barrier layer mask, take it out and wash it with deionized water.

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Abstract

The invention discloses an etching method of solar battery silicon chip edges and reverse diffusion layer, the processing steps are: depositing barrier layer mask of one side of diffused solar battery silicon chip; then putting the solar battery silicon chip into etching solution to etch away non-deposited barrier layer mask side of the solar battery silicon ship and lateral side diffusion layer, and then taking out and washing with deionized water; putting the solar battery silicon chip into chemical solution to remove barrier layer mask and then taking out to wash with deionized water. The invention provided method can remove diffusion layer silicon of edge and reverse, and reduce leakage of electricity effectively and finally affect bettery performance, because the barrier layer etching slow or even non-etching in etching solution and area without barrier layer has a fast etching speed. The invention provided method can reduce defects and cracks of silicon chips periphery, reduce fragmentation ratio in following process, and can control surface morphology of two sides at the same time.

Description

technical field [0001] The invention relates to a method for preparing a solar cell, in particular to an etching method for the edge and back diffusion layer of a solar cell silicon chip. technical background [0002] In the manufacturing process of silicon solar cells, after the silicon wafers of solar cells undergo a diffusion process, a diffusion layer is formed on the surface. The edge of the solar cell silicon wafer and the diffusion layer on one side need to be etched away by a certain process, leaving only the diffusion layer on the other side of the silicon wafer. With the development of solar cell edge etching and backside full etching technology, the problem of backside leakage is better solved, but at the same time there are many corresponding problems, such as insufficient etching or too much etching, which are difficult to control and difficult to monitor. The battery leakage is large and the battery performance drops sharply. Contents of the invention [00...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 姚文杰王建波解柔强黄海冰
Owner CHINA SUNERGY CO LTD
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