PIN type nuclear battery and preparation method thereof

A nuclear battery and battery technology, applied in circuits, nuclear engineering, electrical components, etc., can solve the problems of inability to meet long-term power supply, small battery energy volume, etc., and achieve the effect of improving energy conversion efficiency, increasing energy density, and prolonging service life.

Inactive Publication Date: 2009-09-09
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chemical batteries mainly include dry batteries, storage batteries, fuel cells, microbial batteries, etc. These are commonly used batter

Method used

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  • PIN type nuclear battery and preparation method thereof
  • PIN type nuclear battery and preparation method thereof
  • PIN type nuclear battery and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Such as figure 1 The shown schematic diagram of the structural axis section of an embodiment of the nuclear battery, first prepare the Al 2 o 3 Wafers, which can be purchased from the market to obtain single-side polished 2-inch C-side β-Al 2 o 3 The substrate 1 has a thickness of 300 μm.

[0029] Then carry out the PIN wafer growth process: use MOCVD epitaxial growth equipment, first Al 2 o 3 Substrate 1 is nitrided by passing through ammonia gas at 1100°C for about 2 minutes, then cooling down to 570°C, passing through trimethylgallium and ammonia gas to epitaxially form a gallium nitride (GaN) buffer layer 8 of about 20nm, and then raising the temperature to 1150°C Controlling the silicon doping concentration at 1×10 18 / cm 3 Under stable conditions, trimethylgallium, ammonia gas and silane are introduced to epitaxy n-GaN doped layer 2 of about 2 μm, and then the sample is taken out after cooling down to room temperature; Ammonia and metal gallium epitaxy 20μ...

Embodiment 2

[0032] Prepare Al first 2 o3 Wafers, which can be purchased from the market to obtain single-side polished 2-inch C-side β-Al 2 o 3 The substrate 1 has a thickness of 400 μm.

[0033] Then carry out the PIN wafer growth process: use MOCVD epitaxial growth equipment, first raise the temperature to 1150°C and control the silicon doping concentration at 1×10 19 / cm 3 Under stable conditions, trimethylgallium, ammonia gas and silane are introduced to epitaxy n-GaN doped layer 2 of about 2 μm, and then the sample is taken out after cooling down to room temperature; Ammonia and metal gallium epitaxy 20μm GaN insulating layer 3, then lowered to room temperature, took out the sample; put the sample back into the MOCVD system again, raised the temperature to 1070°C and controlled the magnesium doping concentration at 1×10 20 / cm 3 In a stable condition, trimethylgallium, ammonia gas and magnesocene are injected to epitaxially p-GaN doped layer 4 with a thickness of 17 nm.

[0034...

Embodiment 3

[0037] The preparation method is the same as that of the above two examples. The battery structure can be either the single structure of Example 1 or the composite structure of Example 2. The difference of this example is that the isotope layer 7 can also use nuclear waste strontium-90 , can also realize the preparation of high-efficiency radiovoltaic effect nuclear battery.

[0038] It should be noted that in all implementations including the above three examples, the total thickness of the p-type GaN doped layer and the p-type contact electrode cannot exceed 40nm (for the case described in Example 2, one side is used for calculation) , otherwise it will affect the conversion efficiency of the nuclear battery. Moreover, different nuclear batteries can be integrated in a certain way to obtain higher voltage or current nuclear batteries to meet the needs of different situations.

[0039] From the point of view of expanding applications, the micro-energy layout (each nuclear ce...

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Abstract

The invention discloses a PIN type nuclear battery and a preparation method thereof. The compound epitaxial technique of twice MOCVD epitaxy and once HVPE epitaxy is adopted to grow and obtain a lining, i.e. a PIN unit material structure with an n type GaN doping layer, an insulating layer and a p type GaN doping layer. Then, semiconductor micro-processing is adopted for splashing and generating a corresponding contact electrode so as to form a basic battery unit. An isotope is coupled to the p type contact electrode, and then the nuclear battery is obtained after packaging. As the service life of the nuclear battery is determined by the half-life of the isotope, in the invention, the isotope type (pure beta isotope) with simple protection can be flexibly used so as to greatly improve the energy conversion efficiency and the energy density (energy capacity) of the nuclear battery, prolong the service life of the nuclear battery and provide an effective approach for reasonably reusing waste materials.

Description

technical field [0001] The invention relates to a semiconductor nuclear battery device, in particular to a radiation volt effect nuclear battery in a primary conversion nuclear battery, and belongs to the field of energy applications. Background technique [0002] Generally speaking, batteries include chemical batteries and physical batteries. Chemical batteries mainly include dry batteries, storage batteries, fuel cells, microbial batteries, etc. These are commonly used battery types in human life, but the energy volume of such batteries is relatively small and cannot meet the needs of long-term power supply. Physical batteries mainly include solar cells and nuclear batteries. Nuclear batteries are also called isotope batteries or atomic batteries, which are batteries that directly convert the radioactive energy of atomic nuclei into electrical energy. According to different energy sources, nuclear batteries can be divided into heat source nuclear batteries and radiation e...

Claims

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Application Information

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IPC IPC(8): G21H1/06H01L21/205H01L21/283
Inventor 陆敏
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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