Non-refrigeration infrared detector array based on monocrystal silicon PN junction and preparing method thereof

Abstract

The invention relates to a non- refrigeration infrared detector array based on monocrystalline silicon PN junction temperature characteristic and a preparation method thereof. The preparation method of the array includes: step A. reducing and oxidizing silicon chip, longitudinally forming a bottom silicon layer, a oxygen-imbedding layer and a top silicon layer, forming a deep trough through bottom silicon etching, filling and flattening to transversely divide infrared detection units; step B. arranging a plurality of monocrystalline silicon PN junctions at the top silicon layer in each infrared detection unit; forming electrical connection wiring in each infrared detection unit, and forming a passivation layer on the monocrystalline silicon PN junction and electrical connecting line; step D. manufacturing a suspending heat insulation cantilever beam in each infrared detection unit, and etching the bottom silicon layer to form the cavity. The invention obtains detection result of infrared radiation by utilizing good temperature characteristic of the monocrystalline silicon PN junction and measuring voltage change of two ends of the monocrystalline silicon PN junction.

Description

technical field [0001] The invention relates to the technical field of infrared detectors, in particular to an uncooled infrared detector based on the temperature characteristics of a single crystal silicon PN junction and a manufacturing method thereof. Background technique [0002] Infrared imaging technology is widely used in military, industrial, agricultural, medical, forest fire prevention, environmental protection and other fields, and its core component is the Infrared Focal Plane Array (IRFPA). According to the classification of working principle, it can be divided into: photon infrared detector and uncooled infrared detector. Photon-type infrared detectors use narrow-bandgap semiconductor materials, such as HgCdTe, InSb, etc., and use the photoelectric effect to realize the conversion of infrared light signals into electrical signals; therefore, they need to work at a temperature of 77K or lower, which requires bulky and complicated Refrigeration equipment is diff...

AI Technical Summary

Problems solved by technology

Photon-type infrared detectors use narrow-bandgap semiconductor materials, such as HgCdTe, InSb, etc., and use the photoelectric effect to realize the conversion of infrared light signals into electrical signals; therefore, they need to work at a temperature of 77K or lower, which requires bulky and complicated Refrigeration equipment, difficult to miniaturize, inconvenient to carry

On the other hand, materials such as HgCdTe and InSb are expensive, difficult to prepare, and incompatible with CMOS processes, so the price of photonic infrared detectors has been high

These have greatly hindered the wide application of infrared cameras, especially in civilian use, there is an urgent need to develop a new type of infrared camera with moderate performance and low price.

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