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GaAs Schottky variable capacitance diode and manufacture method thereof

A technology of varactor diodes and manufacturing methods, which is applied in the field of diodes in microwave devices, can solve the problems affecting the monolithic integration of Schottky diodes and increase manufacturing costs, and achieve the effects of easy monolithic integration, flexible structure, and high integration

Active Publication Date: 2010-12-22
锐立平芯微电子(广州)有限责任公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Diodes with this structure are used in frequency doubling circuits, requiring a large number of device carriers, external bias circuits and metal waveguides and other bulky devices, which seriously affects the monolithic integration of Schottky diodes and increases manufacturing costs.

Method used

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  • GaAs Schottky variable capacitance diode and manufacture method thereof
  • GaAs Schottky variable capacitance diode and manufacture method thereof
  • GaAs Schottky variable capacitance diode and manufacture method thereof

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Embodiment Construction

[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0033] Such as figure 2 as shown, figure 2 A cross-sectional view of a GaAs Schottky varactor provided by the present invention. The cross-sectional view is a cross-sectional view perpendicular to the substrate along two ends of the lower electrode of the GaAs Schottky varactor diode. The GaAs PIN diode consists of:

[0034] GaAs insulating substrate used to support the entire GaAs Schottky varactor;

[0035] Highly doped N epitaxially grown on GaAs insulating substrate + layer, at N + A common doped N-type layer that continues to grow epitaxially on the layer;

[0036] After two process steps of island digging and isolation, in the N-type layer, N + The mesa structure formed on the layer;

[0037] Evaporating m...

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Abstract

The invention discloses a GaAs Schottky variable capacitance diode comprising a GaAs insulating substrate for supporting the whole GaAs Schottky variable capacitance diode, a heavily doped N<+> layer epitaxially growing on the GaAs insulating substrate, a common doped N-type layer which keeps on epitaxially growing on the N<+> layer, mesa structures formed on the N-type layer and the N<+> layer through two process steps of land digging and isolation, a Schottky contact upper electrode formed by evaporating metals on the N-type layer and an ohmic contact lower electrode formed by evaporating the metals on the N<+> layer. The invention simultaneously discloses a manufacture method of the GaAs Schottky variable capacitance diode. By using the invention, the device volume is reduced and the integrated level is improved by adopting a plane manufacture process on the premise of not changing the property of the Schottky variable capacitance diode.

Description

technical field [0001] The invention relates to the technical field of diodes in microwave devices, in particular to a GaAs Schottky varactor diode and a manufacturing method thereof. Background technique [0002] Schottky barrier diodes are commonly used nonlinear devices in microwave frequency doubling circuits. Due to their simple preparation process, large variable capacitance ratio, and strong nonlinearity, Schottky barrier diodes are mostly used in the range of millimeter waves and submillimeter waves. on the frequency doubling circuit. It has high operating frequency and high output power. [0003] Traditional Schottky barrier diodes, such as figure 1 As shown, the vertical structure is adopted, which is a kind of honeycomb point contact structure. Diodes with this structure are used in frequency doubling circuits, requiring a large number of device carriers, external bias circuits, and metal waveguides and other bulky devices, which seriously affects the monolithi...

Claims

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Application Information

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IPC IPC(8): H01L29/93H01L29/06H01L21/329
Inventor 董军荣杨浩吴如菲黄杰
Owner 锐立平芯微电子(广州)有限责任公司
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