P -type delafossite base oxide ozone gas sensory semiconductor material and method for making same

Abstract

The invention discloses a p-type delafossite base oxide ozone gas sensing semiconductor material and a method for the production thereof, the ozone gas sensing semiconductor material is a mixture of p-type delafossite base oxide CuM(1-x)AxO2, 0<=x<=0. 30, or the oxide and other materials by arbitrary proportion, and M is a trivalent metal ion of B, Al, Ga, In, Fe, Cr, Sc, Y or La; and A is bivalent metal ions of Mg, Ca, Ni, Sr and Zn. The gas sensing material of the invention has advantages of good selectivity, reversibility and stability to the response of ozone at the room temperature, a gas-sensitive element made by the gas sensing material of the invention need not carry a heater, and the ozone gas has good sensitivity characteristics in the concentration range of 1ppm to 1000ppm at the room temperature. The semiconductor material and the method can provide the room temperature ozone gas-sensitive element with low power consumption, long service life and low cost of manufacture.

Description

technical field [0001] The invention relates to an ozone gas-sensitive semiconductor material and a preparation method thereof. Background technique [0002] Previous semiconductor ozone sensors were generally based on SnO 2 , ZnO, WO 3 and In 2 o 3 Such as oxide semiconductor materials, but such materials must be able to respond at high temperatures above 200°C, so they need to carry a heater, consume a lot of power, and have a short lifespan. In 2002, the ZnO thin film provided on page 45-50 of volume 418 of Thin Solid Films can realize ozone sensing at room temperature, but it must be activated by ultraviolet light when used, so its use is limited. In addition, some SmFeO 3 , CuPc and other p-type materials, Zn 2 In 2 o 5 -MgIn 2 o 4 Multi-component thin film materials also have the above-mentioned disadvantages. In order to solve these problems, a lot of research work has been carried out, such as doping other additives or catalysts, using gas-permeable membra...

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Problems solved by technology

[0002] Previous semiconductor ozone sensors were generally based on SnO 2 , ZnO, WO 3 and In 2 o 3 Such as oxide semiconductor materials, but such materials must be able to respond at high temperatures above 200 ° C, so a heater is required, with high power consumption and short life, which is inconvenient for use in home appliances and biomedical fields and for outdoor measurement

In 2002, the ZnO film provided by Thin Solid Films, volume 418, pages 45-50, can realize room temperature ozone sensing, but it must be activated by ultraviolet light when used, so its use is limited

This literature only studies CuAlO 2 The gas-sensing performance of the material at 1000ppm ozone concentration does not explain the selectivity of the gas-sensing material to other interfering gases, does not study the influence of doping on the ozone gas-sensing performance of the material, and does not explain the range of detection concentration, and these indicators are for gas The application of sensitive components is very important

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