Heat sink material for power device and preparation method thereof

A technology for heat sink materials and power devices, applied in the field of components of power devices, to achieve the effects of small thermal expansion rate, good thermal conductivity, and directional thermal conductivity

Inactive Publication Date: 2008-09-17
宋希振
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the heat sink or packaging material used in high-power electronic devices is composed of metal molybdenum, but the thermal conductivity of the heat sink or packaging material composed of metal molybdenum can only reach 146.5w / m·k; with the development of power devices In order to meet the requirements of increasing power, other new materials that are consistent with the thermal expansion coefficient of the semiconductor chip and have high thermal conductivity must be used to replace the heat sink or packaging material composed of metal molybdenum.

Method used

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  • Heat sink material for power device and preparation method thereof
  • Heat sink material for power device and preparation method thereof
  • Heat sink material for power device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] As shown in Figure 1, it is the internal structure diagram of the tungsten-copper alloy after sintering and infiltration provided by the present invention, including a skeleton 1 made of metal tungsten wrapped by a metal nickel plating layer 3 and infiltrated in the skeleton. Metal copper 2. The tungsten-copper alloy of this structure is prepared through the following procedures.

[0033] The first step of mixing

[0034] Take 20 kg and 60 kg of tungsten powder with a particle size of 4-6 microns, and 1.2 kg of stearic acid, and put them into a ball mill and mix them for 1 hour.

[0035] The second step of compression molding

[0036] Take 1.26 kg of mixed tungsten powder and divide it into seven parts and 0.20 kg of copper fiber with a diameter between 50-200 microns and divide it into six layers and place them in a mold of 50 mm × 100 mm for pressing; Press for 2 to 4 minutes.

[0037] The third step sintering infiltration

[0038] Wrap the pressed tungsten blank...

Embodiment 2

[0042] Example 2

[0043] The first step of mixing

[0044] Take 20 kg and 60 kg of tungsten powder with a particle size of 3-4 microns and 6-8 microns, 2 kg of copper powder with a particle size of 10-20 microns, and 1.5 kg of stearic acid into a ball mill and mix them for 1 Hour.

[0045] The second step of compression molding

[0046] Take 1.26Kg of uniformly mixed tungsten-copper powder and divide it into seven parts, take 0.0378 kg of metallic copper, and make six layers of copper skin with a specification of 50 mm × 100 mm × 200 microns. Press and form in a mold of ×100 mm; the pressing pressure is controlled by pressing the thickness of the billet to 20 mm, and the pressure is maintained for 2 to 4 minutes.

[0047] The third step sintering infiltration

[0048] Put the pressed tungsten-copper billet into the sintering furnace and pre-fire at 150°C for 5 minutes, then sinter and infiltrate at 1400°C for 50 minutes under the protection of hydrogen;

[0049] The four...

Embodiment 3

[0053] In order to further improve the thermal conductivity of the heat sink material for power devices, as shown in Figure 3, a unidirectional fiber structure layer 5 consisting of six layers of copper is sandwiched between seven layers of tungsten-copper alloy layers 4. When in use, its heat can not only be exported through the copper that forms the conjoined structure 2 by infiltration, but also be exported along the direction of the unidirectional fiber, so it has directional heat conduction characteristics, and its preparation process is:

[0054] The first step of mixing

[0055] Take 20 kg and 60 kg of tungsten powder with a particle size of 1-2 microns and 6-8 microns, 15 kg of copper powder with a particle size of 10-20 microns, and 2.0 kg of stearic acid into a ball mill for stirring and mixing. 70 minutes.

[0056] The second step of compression molding

[0057] Take 1.4Kg of uniformly mixed tungsten-copper powder and add it to a 50mm×100mm mold in 7 times. Lay a...

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Abstract

The invention discloses a heat sink material for power devices and a preparation method thereof, and belongs to the technology field of members of power devices. The heat sink material for power devices is prepared from (by weight parts) copper 5-20 and tungsten 80-95 by compounding, pressure moulding, sintering and post treatment. The inventive heat sink material for power devices has expansion coefficient matched with semiconductor materials and high thermometric conductivity, and can satisfy the requirements of high-power devices. The inventive heat sink material also has directional heat-conducting property.

Description

technical field [0001] The invention belongs to the technical field of components of power devices, and in particular relates to a heat sink material for power devices and a preparation method thereof. Background technique [0002] For electronic devices, especially high-power devices, the semiconductor chips that make up the above-mentioned devices will generate heat during operation. In order to timely export the heat, heat sinks or packaging materials must be used. In the structure of electronic devices, since the heat sink or packaging material is connected with the semiconductor chip to form an integrated structure, the heat sink or packaging material used not only has good thermal conductivity, but also its thermal expansion coefficient must match the semiconductor chip . [0003] At present, the heat sink or packaging material used in high-power electronic devices is composed of metal molybdenum, but the thermal conductivity of the heat sink or packaging material com...

Claims

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Application Information

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IPC IPC(8): C22C27/04C22C1/04B22F3/12
Inventor 宋希振
Owner 宋希振
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