Method for manufacturing machine-direction double-grid metal-oxide-semiconductor element

Abstract

The invention discloses a method for manufacturing a longitudinal dual-grid MOS component, which comprises the following steps: firstly, an ion implantation technology is adopted on a silicon face at the top layer of a SOI substrate to form an N-P-N structure, wherein an N area is highly doped, and a P area is lowly doped; secondly, an electron beam exposure method and an ICP etching method are adopted to form a longitudinal trench at the position of the interface of the N area and the P area where the N-P-N structure is formed; thirdly, a thermal oxidation technology is adopted to form a layer of silicon oxide on the silicon face at the top layer of the longitudinal trench; fourthly, a low pressure chemical vapor deposition technology is adopted to combine a tetra ethyl ortho silicate TEOS source to be filled with the silicon oxide to the longitudinal trench; fifthly, the photoetching is operated on the surface of the filled silicon oxide, the silicon oxide is corroded and the N area and the P area are exposed; sixthly, metal is evaporated on the surface of the exposed N area and P area, and an electrode is formed through the photoetching corrosion. Through adopting the invention, the high speed information transmission in the optical communication and inside a chip system is realized.

Description

technical field [0001] The invention relates to the technical field of vertical double-gate metal-oxide-semiconductor (MOS) devices in semiconductor devices, in particular to a method for manufacturing a vertical double-gate MOS device based on silicon-on-insulator (SOI) material. Background technique [0002] In recent years, with the rapid development of silicon-on-insulator-compensated metal-oxide-semiconductor (SOI CMOS) technology and SOI optical waveguide devices, people have continuously turned their attention to the multifunctional integration of SOI-based on-chip optoelectronic devices. [0003] SOI technology has incomparable advantages over bulk silicon technology. CMOS devices made on SOI materials have the advantages of low power consumption, strong anti-interference ability, high integration, high speed, simple process, and strong anti-radiation ability. As the thickness of the top silicon film of SOI is reduced to less than the width of the depletion region o...

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Problems solved by technology

The MOS structure avoids the influence of the carrier recombination process on the modulation rate of the device, but the overlapping area of ​​the modulation area and the light field is small, and the modulation efficiency needs to be improved.

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