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Method for cleaning surface of ceramic parts

A technology for ceramic parts and parts, which is applied in the field of cleaning the surface of ceramic parts, can solve the problems of remaining dark gray stains, time-consuming and labor-intensive cleaning process, and easy damage to the ceramic surface, and achieves the effect of simple and convenient steps and ideal cleaning effect.

Active Publication Date: 2008-04-02
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the cleaning process, since the characteristics of ceramic parts are different from those of other metal parts, this method is not only time-consuming and labor-intensive in the process of removing polymers, but also easily damages the ceramic surface, and the cleaning effect on polymers is not ideal. dark gray stains

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0090] Cleaning is mainly divided into three steps: soaking in chemical solution, rough washing with ultrapure water and fine washing with deionized water. When cleaning, care should be taken to separate ceramic parts from other metal parts. After the parts are removed from the etching equipment, they should be rinsed with clean water immediately, then wiped with acetone to remove grease, then soaked in a solution of hydrogen peroxide and ammonia, then soaked in an organic solvent, and then wiped and rinsed with deionized water. Baked in the oven after cleaning. The specific steps are shown in the following process.

[0091] Step 11. Immediately after disassembly, rinse with ultrapure water for 20 to 30 minutes, and wipe until the dust-free cloth has no color.

[0092] Step 12. Soak in an organic solvent (such as isopropanol) solution for 4 to 8 hours, and wipe it with a dust-free cloth. If necessary, use a cleaning pad suitable for a clean room.

[0093] Step 13, spray the...

Embodiment 2

[0110] Cleaning is mainly divided into four steps: soaking in chemical solution, rough cleaning with ultrapure water, fine cleaning with deionized water, and high-temperature baking. When cleaning, care should be taken to separate ceramic parts from other metal parts. After the parts are removed from the etching equipment, they should be rinsed with clean water immediately, then wiped with an organic solvent, rinsed with clean water, and soaked in an oxidizing weakly alkaline solution. In particular, ceramic parts must be the same as other metal parts. Wash separately. Ceramic parts are placed in an acidic solution for soaking. After cleaning, bake at high temperature for 30-90 minutes. The specific steps are as follows:

[0111] Step 21. Immediately after disassembly, rinse with ultrapure water for 20 to 30 minutes, and wipe until the dust-free cloth has no color.

[0112] Step 22. Repeatedly wipe with organic solvent (such as isopropanol) until the dust-free cloth has no...

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PUM

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Abstract

The invention provides a cleaning method for ceramics component surface. In the process of cleaning, organic solvent, alkaline solution, acid solution and super ultrapure water is adopted to clean the component and can effectively remove polymer film attached on the surface of the ceramics component, moreover, the invention has simple and convenient procedure and ideal cleaning effect and cannot lead to damage of the ceramic surface. If the ceramic component used for a certain period in semiconductor process is cleaned with the method, contamination on the surface of the ceramic component can be fully removed without damage of the surface of the ceramic component, and cleaned ceramic component can fully satisfy the requirement of normal process, moreover, cleaning effect can be realized.

Description

technical field [0001] The invention relates to a method for cleaning an object, in particular to a method for cleaning the surface of a ceramic part in a microelectronic process. Background technique [0002] With the development of semiconductor chip technology, the technology node has developed from 250nm to 65nm, or even below 45nm, and the size of silicon wafers has also increased from 200mm to 300mm. Under such circumstances, the cost of each silicon wafer becomes higher and higher . The technological requirements for processing silicon wafers are becoming more and more stringent. The processing of semiconductors needs to go through multiple processes, including deposition, photolithography, etching, sidewalls, etc. The etching process is one of the more complicated ones. The state of the plasma and various process parameters during the plasma etching process are related to Etching results are directly related. [0003] During the dry etching process of the semicond...

Claims

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Application Information

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IPC IPC(8): B08B3/08B08B3/12B08B7/04B08B1/00B08B3/02C04B35/64F26B5/00C11D7/50C11D7/06C11D7/08
Inventor 陶林
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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