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Device for single-crystal growth by physical gas phase transmission precipitation method

A technology of physical vapor transport and single crystal growth, applied in the direction of single crystal growth, crystal growth, chemical instruments and methods, etc., can solve the problems of high cost and easy damage to the vacuum chamber, and achieve low price, cost reduction, and high mechanical strength. Effect

Inactive Publication Date: 2008-03-19
BEIJING SHENGSHIXING TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the problem that the vacuum chamber made of quartz glass in the prior art is easily damaged and the cost is high, the present invention proposes a new type of single crystal growth equipment for growing single crystals by physical vapor transport deposition, including high frequency or Intermediate frequency power supply, vacuum system, air pressure control system, graphite crucible for placing single crystal raw material powder and the original single crystal to be grown, and suitable heat preservation material, induction heating coil, tubular vacuum growth chamber and the upper and lower chambers for sealing the vacuum growth chamber The stainless steel water-cooled flange of the port is characterized in that the tubular vacuum growth chamber is made of ceramic material

Method used

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  • Device for single-crystal growth by physical gas phase transmission precipitation method

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Effect test

Embodiment 1

[0013] With an outer diameter of about 250mm, a wall thickness of about 12mm, and a length of about 600mm 2 o 3 content>98%) as the vacuum growth chamber 1. A vapor deposition method single crystal growth device is fabricated by adopting an external structure of the induction coil 6 for growing SiC single crystal.

[0014] The graphite crucible used has an outer diameter of 80mm and a height of 100mm. Each time, 600g of SiC polycrystalline powder (20-40 mesh) graphite carbon felt is used as the insulation material and forms a suitable temperature field distribution. The use frequency is 2.5KH z intermediate frequency power supply.

[0015] After the furnace is installed according to the process requirements, use a vacuum system equipped with a molecular pump to evacuate the vacuum growth chamber made of ceramic tubes to 10 -3 After reaching a vacuum degree of Pa level, fill the vacuum growth chamber with argon gas to 1000Pa and use an automatic gas pressure control system t...

Embodiment 2

[0017] Using a cylindrical industrial ceramic tube (glazed) with an outer diameter of about 250mm, a thickness of about 15mm, and a length of about 600mm, which is sintered on the basis of kaolin, is used as a vacuum growth chamber with an external structure of the induction coil to produce a vapor deposition method for single crystal growth. Equipment for growing SiC single crystals.

[0018] The graphite crucible used has an outer diameter of 80mm and a height of 100mm. Each time, 600g of SiC polycrystalline powder (20-40 mesh) graphite carbon felt is used as the insulation material and forms a suitable temperature field distribution. The use frequency is 2.5KH z intermediate frequency power supply.

[0019] After the furnace is installed according to the process requirements, use a vacuum system equipped with a molecular pump to evacuate the vacuum growth chamber made of ceramic tubes to 10 -3 After reaching a vacuum degree of Pa level, fill the vacuum growth chamber with ...

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Abstract

The application discloses monocrystal growth equipment used for the monocrystal growth in a physical gas phase transmission method. The equipment comprises a tubular vacuum growth room, a high frequency or intermediate frequency power, a vacuum system, a pneumatic pressure control system, a graphite crucible used for arranging monocrystal raw material powder and the grown parent monocrystal, an induction heating coil, and flange plates at the upper end and the lower end of a sealed vacuum growth room. The application is characterized in that the tubular vacuum growth room is made of ceramic material. Because the monocrystal growth equipment of the present invention adopts the vacuum growth room made of industry ceramics, the mechanical strength of the vacuum growth room is high, easy fragmentation and the problem of the micritization of a quartz glass cell are not existed. The monocrystal growth equipment can work in high temperature environment, and has low price, thereby reducing the equipment cost.

Description

technical field [0001] The invention relates to a single crystal growth device for growing a single crystal by a physical vapor transport precipitation method, such as the growth device for SiC single crystal and AlN single crystal. Background technique [0002] The physical vapor transport precipitation method is a single crystal growth technology developed in recent years. It is suitable for growing certain crystals that will decompose and sublime at high temperatures and cannot be grown into single crystals by the commonly used single crystal growth technology such as high-temperature melt method. Crystals of some compounds are single crystals. For example: compound semiconductor materials such as SiC and AlN. SiC single crystal and AlN single crystal are semiconductor materials with excellent physical properties, especially suitable for making high-frequency, high-power microwave devices and optoelectronic devices that can work under harsh conditions of high temperature...

Claims

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Application Information

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IPC IPC(8): C30B23/00
Inventor 吴晟
Owner BEIJING SHENGSHIXING TECH CO LTD
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